室温脱钴对PCD微观结构及力学性能的影响

张鹏; 杨雪峰; 陈冰威; 黄雷波; 骈小璇; 栗正新; 闫宁; 王孝琪; 孙冠男; 张鹏飞; 李志尧; 司治华; 陈强; 宜娟; 李金鑫

doi:10.13394/j.cnki.jgszz.2022.0052

室温脱钴对PCD微观结构及力学性能的影响

doi: 10.13394/j.cnki.jgszz.2022.0052

1.
河南工业大学材料科学与工程学院, 郑州 450000
2.
郑州新亚复合超硬材料有限公司, 郑州 450000
3.
郑州磨料磨具磨削研究所有限公司, 郑州 450000
4.
郑州钻石精密制造有限公司, 郑州 450000
5.
河南晶锐新材料股份有限公司, 郑州 451100
6.
河南亚龙金刚石制品股份有限公司, 郑州 450000
7.
富耐克超硬材料股份有限公司, 郑州 450000

详细信息

作者简介:
张鹏，男，1997年生，硕士研究生。主要研究方向：磨料磨具，金刚石功能化应用。E-mail：1536438742@qq.com

中图分类号: TQ164
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- 被引次数: 0
出版历程
- 收稿日期: 2022-04-18
- 修回日期: 2022-07-12
- 录用日期: 2022-07-25
- 网络出版日期: 2022-07-25
- 刊出日期: 2023-01-12

Effect of room temperature cobalt removal on the microstructure and mechanical properties of PCD

1.
School of Materials Science and Engineering, Henan University of Technology, zhengzhou 450000, China
2.
Zhengzhou abrasive grinding Research Institute Co., Ltd., Zhengzhou 450000, China
3.
Zhengzhou diamond Precision Manufacturing Co., Ltd., Zhengzhou 450000, China
4.
Zhengzhou Xinya composite Superhard Material Co., Ltd., Zhengzhou 450000, China
5.
Henan Jingrui New Material Co., Ltd., Zhengzhou 451100, China
6.
Henan Yalong Diamond Products Co., Ltd., Zhengzhou 450000, China
7.
Funike Superhard Material Co., Ltd., Zhengzhou 450000, China

摘要

摘要: 为提高PCD使用过程中的热稳定性，选用硫酸-过氧化氢混合溶液在室温下对PCD进行脱钴处理，研究其脱钴机理及脱钴对PCD微观结构及力学性能的影响。通过SEM观察到PCD在室温脱钴48 h后表面出现较大深度的腐蚀坑，钴相基本被去除，上下表面脱钴深度分别为176 μm和162 μm；通过EDS可确定脱钴层剩余钴的质量分数为0.93%，而未脱钴层钴的质量分数为7.64%，表明87.83%的钴在实验中被硫酸-过氧化氢混合溶液溶解而去除。对PCD样品进行残余应力测量，脱钴之前的残余压应力为483.91 MPa，脱钴之后的残余压应力为330.35 MPa，后者相对前者减少31.73%，说明脱钴可以有效降低PCD内部残余压应力。
- 聚晶金刚石 /
- 脱钴 /
- 硫酸-过氧化氢 /
- 残余应力
Abstract: In order to improve the thermal stability of PCD during practical application, the mixed solution of sulfuric acid and hydrogen peroxide was selected to remove cobalt from PCD. The effect of decobaltization on microstructure and mechanical property of PCD as well as its mechanism were studied. According to the SEM results, several deep corrosion pits were observed on the surface of PCD after the 48 h decobaltization process under room temperature, indicating that the cobalt phase was almost removed. Besides, the depths of decobaltization on the upper and lower surfaces were 176 μm and 162 μm, respectively. Based on the EDS results, the remaining mass fraction of cobalt in the decobaltized layer was determined to be 0.93%, while that in the non-decobaltized layer was 7.64%. This suggested that 87.83% of cobalt was dissolved and removed in the mixed solution of sulfuric acid and hydrogen peroxide. The residual stress of PCD samples was also measured. The residual stress before and after decobaltization was 483.91 MPa and 330.35 MPa, respectively. The reduction of 31.73% indicated that decobaltization could effectively reduce the residual thermal stress in PCD.
- polycrystalline diamond (PCD) /
- decobaltization /
- H₂SO₄-H₂O₂ /
- residual stress

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图 1 硫酸-过氧化氢溶液的脱钴机理示意图

Figure 1. Schematic diagram of cobalt removal mechanism of H₂SO₄-H₂O₂ mixed solution

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图 2 PCD在不同放大倍率下未进行脱钴的SEM形貌

Figure 2. SEM morphologies of PCD without cobalt removal at different magnifications

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图 3 硫酸-过氧化氢混合溶液脱钴48 h后的SEM形貌

Figure 3. SEM morphologies of H₂SO₄-H₂O₂ mixed solution after 48 hours of cobalt removal

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图 4 PCD样品未抛光面脱钴48 h后的SEM形貌

Figure 4. SEM morphologies of unpolished surface of PCD sample after 48 hcobalt removal

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图 5 48 h脱钴后PCD表面的EDS元素组成

Figure 5. EDS element compositions of PCD surface after 48 h cobalt removal

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图 6 PCD样品纵剖面SEM形貌

Figure 6. SEM morphologies of longitudinal section of PCD sample

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图 7 48 h脱钴处理后脱钴层的EDS

Figure 7. EDS element compositions of cobalt removal layer after 48 h cobalt removal treatment

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图 8 48 h脱钴处理后未脱钴层的EDS

Figure 8. EDS element compositions of non cobalt removal layer after 48 h cobalt removal treatment

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图 9 脱钴层至未脱钴层的EDS线扫描图谱

Figure 9. EDSline scan map from cobalt removal layer to non cobalt removal layer

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图 10 PCD样品脱钴前后的XRD图谱

Figure 10. XRD patterns of PCD samples before and after cobalt removal

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图 11 PCD脱钴前后sin²ψ-2θ图Fig.11 sin²ψ-2θ diagrams before and after PCD cobalt removal

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