MPCVD金刚石涂层均匀性生长的数值模拟与实验

张斌华; 简小刚

doi:10.13394/j.cnki.jgszz.2023.0211

MPCVD金刚石涂层均匀性生长的数值模拟与实验

doi: 10.13394/j.cnki.jgszz.2023.0211

张斌华,
简小刚^,

同济大学机械与能源工程学院, 上海 201804

基金项目: 国家自然科学基金（50275095，51275358）。

详细信息

作者简介:
张斌华，男，1998年生，硕士。主要研究方向：MPCVD金刚石涂层制备与性能检测。E-mail：zhangbh@tongji.edu.cn

通讯作者:
简小刚，男，1975年生，博士、副教授。主要研究方向：涂层制备与性能检测。E-mail：jianxgg@tongji.edu.cn

中图分类号: TQ164; TG71
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- 被引次数: 0
出版历程
- 收稿日期: 2023-10-01
- 修回日期: 2023-11-23
- 网络出版日期: 2023-12-11
- 刊出日期: 2024-04-01

Numerical simulation and experiment of uniform growth of MPCVD diamond coating

ZHANG Binhua,
JIAN Xiaogang^,

School of Mechanical and Energy Engineering, Tongji University, Shanghai 201804, China

摘要

摘要: 基于多物理场耦合仿真软件COMSOL Multiphysics的微波等离子体模块建立MPCVD反应腔内氢气等离子体的仿真模型，研究基底外侧增设的环状钼支架与基底的不同高度差Δh对基底表面等离子体分布的影响。采用变异系数对等离子体分布的均匀性进行定量分析，并用SEM对金刚石涂层表面的微观形貌进行表征。结果表明：当Δh=0 mm时，等离子体分布的均匀性最佳，变异系数为3.998%，金刚石涂层的晶粒分布及大小的均匀性相较于无钼支架时的明显提升；当Δh＜0 mm时，等离子体分布的均匀性随Δh增大而提升，变异系数由10.265%降至3.998%；当Δh＞0 mm时，等离子体分布的均匀性不增反降，变异系数升高至10.048%。此外，当Δh=−2.0 mm时，基底表面的等离子体密度约下降20%，不利于金刚石涂层生长。
- 金刚石涂层 /
- 均匀性 /
- 微波等离子体 /
- 数值模拟
Abstract: Based on the microwave plasma module of multiphysics simulation software COMSOL Multiphysics, a numerical model of hydrogen plasma inside a MPCVD reactor was built. The effect of different height differences Δh between the circular molybdenum support added on the outer side of the substrate and the substrate on the plasma distribution at the surface of the substrate was investigated. The uniformity of plasma distribution was quantitatively analyzed by coefficient of variation, and the microstructure of diamond coating surface was characterized by SEM. The results show that when Δh=0 mm, the uniformity of plasma distribution is the best, the coefficient of variation is 3.998%, and the uniformity of grain distribution and size of diamond coating is significantly improved compared with that without molybdenum support. When Δh< 0 mm, the uniformity of plasma distribution increases with the increase of Δh, and the coefficient of variation decreases from 10.265% to 3.998%. When Δh>0 mm, the uniformity of plasma distribution does not increased but decreases, and the coefficient of variation increases to 10.048%. In addition, when Δh=−2.0 mm, the plasma density on the substrate surface decreases by about 20%, which is not conducive to the growth of diamond coating.
- diamond coating /
- uniformity /
- microwave plasma /
- numerical simulation

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图 1 圆柱形金属谐振腔式MPCVD装置示意图

Figure 1. Schematic diagram of cylindrical metal resonant cavity MPCVD device

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图 2 基片台简化模型

Figure 2. Simplified model of substrate platform

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图 3 电子数密度分布图

Figure 3. Number density distribution of electrons

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图 4 基底径向电子数密度分布图

Figure 4. Radial number density distribution of electrons on the substrate surface

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图 5 电子数密度的变异系数

Figure 5. Coefficients of variation of electron number density

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图 6 沉积时的基底表面照片

Figure 6. Photos of the substrate surface during deposition

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图 7 对照组和实验组的金刚石涂层不同区域的SEM图像

Figure 7. SEM images of different areas of diamond coating in control group and experimental group

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表 1 原始数据及电子数密度的变异系数

Table 1. Original data and coefficients of variation of electron number density

高度差 Δh / mm	标准差 $\sigma $/ m⁻³	平均值 $\mu $/ m⁻³	变异系数 ${C_{\rm{v}}}$/%
−2.0	3.918 × 10¹⁷	3.817 × 10¹⁸	10.265
−1.0	2.842 × 10¹⁷	3.801 × 10¹⁸	7.477
−0.5	2.233 × 10¹⁷	3.649 × 10¹⁸	6.119
0	1.516 × 10¹⁷	3.792 × 10¹⁸	3.998
0.5	1.504 × 10¹⁷	3.497 × 10¹⁸	4.301
1.0	3.131 × 10¹⁷	3.116 × 10¹⁸	10.048

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表 2 实验工艺参数

Table 2. Process parameters

参数	形核	生长
基底温度 θ / ℃	625	800
CH₄流量 l₁ / sccm	5.0	4.3
CO₂流量 l₂ / sccm	6.0	0
Ar流量 l₃ / sccm	15	0
H₂流量 l₄ / sccm	200	200
压力 p / kPa	8	8
时间 t / h	2	7

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表 3 沉积前后基底厚度

Table 3. Substrate thickness before and after deposition

测量区域	实验前厚度 d₁ / mm	沉积后厚度 d₂ / mm	厚度差 Δd / μm
对照组基底中心	2.001	2.033	32
对照组基底边缘	2.006	2.044	38
实验组基底中心	1.997	2.021	24
实验组基底边缘	2.002	2.028	26

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