基于单颗金刚石划擦的单向C<sub>f</sub>/SiC复合材料去除机理

温家宙; 王庆霞; 余爱武; 吴重军

doi:10.13394/j.cnki.jgszz.2023.0104

基于单颗金刚石划擦的单向C_f/SiC复合材料去除机理

doi: 10.13394/j.cnki.jgszz.2023.0104

温家宙^1,,
王庆霞^{1, 3},
余爱武^{2, 3},
吴重军^{1, 3, ,}

1.
东华大学机械工程学院，上海 201600
2.
上海航天设备制造总厂有限公司，上海 201108
3.
上海航天工艺与装备工程技术研究中心，上海 201108

基金项目: 国家自然科学基金（52005098）；上海市自然科学基金（22ZR1402400）；上海航天科技创新基金（SAST2022-059）；中国博士后基金（2022M721910）。

详细信息

通讯作者:
吴重军，男，1988年生，博士、副教授。主要研究方向：高性能制造工艺与装备。E-mail：wcjunm@dhu.edu.cn

中图分类号: TG580.61
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- HTML全文浏览量: 8
- PDF下载量: 4
- 被引次数: 0
出版历程
- 收稿日期: 2023-05-07
- 修回日期: 2023-07-11
- 录用日期: 2023-08-29
- 网络出版日期: 2024-06-28
- 刊出日期: 2024-06-28

Removal mechanism of unidirectional C_f/SiC composites based on single diamond grit scratching

WEN Jiazhou^1
,,
WANG Qingxia^{1, 3},
YU Aiwu^{2, 3},
WU Chongjun^{1, 3
, ,}

1.
Donghua University, College of Mechanical Engineering, Shanghai 201600, China
2.
Shanghai Aerospace Equipments Manufacturer Co., Ltd., Shanghai 201108, China
3.
Shanghai Aerospace Process and Equipment Engineering Technology Research Center, Shanghai 201108, China

摘要

摘要: 为研究单向C_f/SiC复合材料划擦去除机理，采用单颗金刚石磨粒开展准静态划擦试验，分析不同压痕载荷下划擦材料的声发射信号变化，结合SEM形貌分析材料的去除行为和划擦去除机理。试验结果表明：声发射信号强度随着压痕载荷增加而增强，相同参数下SB方向信号值更大，信号波动更剧烈。结合声发射信号与SEM形貌分析，得出材料在不同方向的划擦去除行为，材料以脆性去除为主，SA方向纤维以拉伸断裂和纤维拔出为主，SB方向纤维主要断裂方式为弯曲断裂和剪切断裂。根据SEM形貌分析，阐述去除行为的形成过程，即解释材料划擦去除机理。
- 单向C_f/SiC复合材料 /
- 单颗磨粒划擦试验 /
- 声发射信号 /
- 材料去除机理
Abstract: To investigate the scratch removal mechanism of unidirectional C_f/SiC composite materials, quasi-static scratching tests were carried out using a single diamond abrasive grain to analyze the changes in acoustic emission signals of the scratched materials under different indentation loads. These tests were complemented by SEM images to analyze the removal behavior and scratch removal mechanism of the materials. The test results show that the acoustic emission signal value increases with the increase in indentation load. Under the same parameters, the signal value in the SB direction is larger, and the signal fluctuation is more severe. Combining the acoustic emission signal and SEM morphology analysis, it is concluded that the scratch removal behavior of the material varies in different directions. The material primarily undergoes brittle removal. In the SA direction, fibers mainly experience tensile fracture and fiber pull-out, whereas in the SB direction, the main fracture modes of the fiber are bending fracture and shear fracture. According to the SEM morphology analysis, the formation process of the removal behavior and the material scratch removal mechanism are described.
- unidirectional C_f/SiC composites /
- single diamond grit scratching /
- acoustic emission signal /
- material removal mechanism

HTML全文

图 1 划擦试验装置

Figure 1. Scratching test device

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图 2 划擦试验加工方向

Figure 2. Scratching directions of test

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图 3 不同划擦参数对声发射信号的影响

Figure 3. Effect of scratching parameters on acoustic emission signals

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图 4 SA方向的材料去除

Figure 4. Material removal along SA direction

(a) 1 N; (b) / (d) 3 N; (c) / (e) 5 N

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图 5 SB方向的材料去除

Figure 5. Material removal along SB direction

(a) / (d) 1 N; (b) / (e) 3 N; (c) / (f) 5 N

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图 6 SA方向材料划擦的去除机理

Figure 6. Material removal mechanism of scratching along SA direction

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图 7 SB方向材料划擦的去除机理

Figure 7. Material removal mechanism of scratching along SB direction

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图 8 划针接触纤维不同位置下材料去除

Figure 8. Material removal when needles contact different positions of the fibre

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表 1 T300、碳化硅的物理和力学性能参数^[10,14-15]

Table 1. Physical and mechanical performance parameters of T300 and silicon carbide^[10,14-15]

材料	密度 ρ g/cm³	维氏硬度 H_V	断裂韧性 τ MPa/m^1/2	方向	杨氏模量 Y GPa	泊松比 ν	抗弯强度 σ MPa
T300	1.76	80	2.0	轴向	230	0.013	388
T300	1.76	80	2.0	径向	15	0.300	612
SiC	3.22	23	3.5	轴向	450	0.170	490
SiC	3.22	23	3.5	径向	450	0.170	490

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