SPH方法的单晶硅激光辅助切削仿真与试验

黄分平; 舒霞云; 许伟静; 常雪峰

doi:10.13394/j.cnki.jgszz.2023.0025

SPH方法的单晶硅激光辅助切削仿真与试验

doi: 10.13394/j.cnki.jgszz.2023.0025

1.
厦门理工学院机械与汽车工程学院, 福建厦门 361021
2.
集美大学海洋装备与机械工程学院, 福建厦门 361021

基金项目: 国家自然科学基金(51875491)。

详细信息

作者简介:
黄分平，男，1998年生，硕士研究生。主要研究方向：单晶硅超精密加工。E-mail：2456712926@qq.com

通讯作者:
常雪峰，男，1975年生，教授。主要研究方向：超精密加工、齿轮表面微结构等。E-mail：xfchang@xmut.edu.cn

中图分类号: TG58; TG71; TQ164
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- PDF下载量: 28
- 被引次数: 0
出版历程
- 收稿日期: 2023-02-16
- 修回日期: 2023-03-29
- 录用日期: 2023-04-06
- 网络出版日期: 2023-11-06
- 刊出日期: 2023-12-01

Simulation and experimental study of single-crystal silicon laser assisted cutting based on SPH method

1.
School of Mechanical and AutomotiveEngineering, Xiamen University of Technology, Xiamen 361021, Fujian, China
2.
College of Marine Equipment and Mechanical Engineering, Jimei University, Xiamen 361021, Fujian, China

摘要

摘要: 单晶硅加工过程中很容易产生细微裂纹，从而影响表面加工质量。激光辅助加工（laser-assisted machining, LAM）可以软化代加工区域，有效减小切削力，延长刀具寿命，提高表面加工质量。建立热力耦合的SPH模型，来模拟单晶硅激光辅助车削过程，在不同温度条件下，探究裂纹扩展损伤和切削应力以及转速和切深对表面粗糙度的影响，并通过LAM试验，验证仿真结果的准确性。结果表明：提高温度有利于单晶硅的塑性切削，随着切削域温度的增加刀具应力逐渐减小，300 ℃时的刀具应力较常温下降低了约50%，表面加工质量有明显提升；且600 ℃时的切屑为塑性流动锯齿线条，其塑性大幅度提高。切削时应选择较小的切削深度，低于4 500 r/min的转速，单晶硅表面粗糙度S_a可在1.000 nm以下。
- SPH /
- 单晶硅 /
- 超精密切削 /
- 激光辅助
Abstract: Fine cracks are easy to occur in the processing of monocrystalline silicon, which affects the surface processing quality. Laser assisted machining (LAM) can soften the substitute machining area, effectively reduce the cutting force, extend the tool life and improve the surface quality. In this paper, a thermo mechanical coupled smooth particle model is established to simulate the laser assisted turning process of single crystal silicon. Under different temperature conditions, crack propagation damage and cutting stress are explored. The influence of speed and cutting depth on surface roughness. Finally, the accuracy of simulation results is verified by laser assisted cutting experiments. The results show that increasing the temperature is beneficial to the plastic cutting of monocrystalline silicon. With the increase of the cutting zone temperature, the tool stress gradually decreases. The tool stress at 300 ℃ is about 50% lower than that at room temperature, and the surface processing quality is significantly improved. At 600 ℃, the chip is a plastic flow sawtooth line, and the plasticity is greatly improved. During cutting, a smaller cutting depth shall be selected, the rotating speed shall be lower than 4 500 r/min, and the surface roughness Sa of monocrystalline silicon can be less than 1 nm.
- SPH /
- monocrystalline silicon /
- ultra-precision machining /
- laser assisted

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图 1 单晶硅切削仿真模型

Figure 1. Simulation model of monocrystalline silicon cutting

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图 2 “虚粒子法”对称平面

Figure 2. “Virtual particle” plane of symmetry

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图 3 激光加热模型

Figure 3. Laser heating model

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图 4 激光加热单晶硅截面温度场分布

Figure 4. Temperature field distribution of single crystal silicon section heated by laser

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图 5 600 ℃激光加热辅助切削应力分布图

Figure 5. Stress distribution diagram of laser assisted cutting at 600 ℃

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图 6 已加工表面应力分布图

Figure 6. Stress distribution diagram of machined surface

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图 7 不同温度切削力仿真曲线图

Figure 7. Simulation curve of cutting force at different temperatures

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图 8 切削仿真材料表面粗糙度

Figure 8. Cutting simulation material surface roughness

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图 9 切削速度与表面粗糙度曲线图

Figure 9. Curve of cutting speed and surface roughness

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图 10 切削深度与表面粗糙度曲线图

Figure 10. Curve of cutting depth and surface roughness

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图 11 激光加热辅助车削装置

Figure 11. Laser heating assisted turning device

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图 12 温度对单晶硅表面粗糙度的影响

Figure 12. Effect of temperature on surface roughness of monocrystalline silicon

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图 13 背吃刀量对单晶硅表面粗糙度的影响

Figure 13. Influence of back cut on surface roughness of monocrystalline silicon

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图 14 主轴转速对单晶硅表面粗糙度的影响

Figure 14. Influence of back feed on surface roughness of monocrystalline silicon influence of spindle speed on surface roughness of monocrystalline silicon

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图 15 不同温度下的切屑形貌

Figure 15. Chip morphology at different temperatures

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表 1 金刚石刀具部分参数

Table 1. Some parameters of diamond tools

属性	取值
密度 ρ / ( kg·m⁻³)	3 500
弹性模量 E / GPa	850
泊松比 v	0.1
比热 c / ( J·kg⁻¹·℃)	471.5
熔化温度 θ / ℃	4 027
热传导系数 λ / ( W·m⁻¹·℃)	1 500
热膨胀系数 ε / ( μm· m⁻¹·℃)	2.0

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表 2 J-C 模型参数

Table 2. J-C model parameters

参数	A / MPa	B / MPa	m	n	C
数值	300	1597	1.163	0.45	0.004
参数	D₁	D₂	D₃	D₄	D₅
数值	0.053	0.9	−1.5	0.01	0.6

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参考文献(13)

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