Preparation of CVD single crystal diamond and research of its infrared property
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摘要: 利用微波等离子化学气相沉积法,以H2/CH4/N2为混合气源,在CVD金刚石单晶基底上同质外延生长金刚石。在一定的甲烷浓度下,分析衬底温度对金刚石结晶质量及光学性能的影响。利用光学显微镜、扫描电子显微镜(SEM)表征金刚石单晶,得到金刚石单晶的样品颜色、内部缺陷、表面形貌等信息。对金刚石样品进行抛光处理后,使用红外傅里叶变换光谱仪对金刚石进行检测,得到红外波段的光学透过率。结果表明:在生长温度为930 ℃左右时金刚石的结晶质量最好,红外透过率最高,可达70%以上;略高或略低的温度均会降低其红外透过率,相对来说略高的温度下生长的金刚石结晶质量和红外性能优于低温下生长的金刚石的。N2的掺杂会导致单晶带有棕褐色,生长速率显著变快,严重降低红外波段的光学性能。Abstract: With H2/CH4/N2 as the mixed gas source, the single crystal diamonds are deposited on CVD diamond substrate using microwave plasma chemical vapor deposition method. The effect of substrate temperature on diamond crystallization quality and optical properties at a certain concentration of methane are analyzed. Optical microscope and scanning electron microscope (SEM) are used to characterize the color, the internal defect and the surface morphology of the CVD diamond samples. After polishing, the infrared transmittance of the samples is detected by the infrared Fourier transform spectrometer. The results show that the crystallization quality and the infrared transmittance is the best when the growth temperature is maintained at about 930 ℃. The infrared transmittance will reduce if the temperature is higher or lower. It also shows that the diamond grown at a slightly higher temperature has better crystallization quality and infrared transmittance performance than diamond grown at a lower temperature. The N2 doped diamond shows a brown color and faster growth rate, the infrared transmittance performance of which will be seriously reduced.
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Key words:
- microwave plasma /
- substrate temperature /
- infrared transmittance /
- doping
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