Suppression and elimination of [NV] and [SiV] defects in CVD single crystal diamond
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摘要: 反应气体中添加体积分数0.001%的N2,研究CVD金刚石PL(photoluminescence spectroscopy,PL)光谱发现,与N杂质相关的[NV]0与[NV]-和与Si杂质相关的[SiV]是金刚石中的主要杂质缺陷。经过高温高压(high temperature and high pressure,HPHT)处理后,[NV]0峰的强度被削弱,[NV]-峰的强度被增强,[SiV]峰的强度被显著增强,并新出现了[SiV]-宽峰。反应气体中N2体积分数降至0.000 1%并添加0.5%的O2后,[NV]0与[NV]-峰消失,O2升高至1%后[SiV]峰强度出现了明显降低,继续升高O2含量,[SiV]峰强度下降趋势变缓,这些现象证明了添加少量O2有助于CVD金刚石中N和Si杂质缺陷的抑制与消除。Abstract: Investigating the photoluminescence spectroscopy (PL) of CVD diamond with 10 ppm N2 added in the reaction gas, it demonstrates that [NV]0 and [NV]- related to N impurity and [SiV] related to Si impurity are the main defects in diamond. After high temperature and high pressure (HPHT) treatment, the [NV]0 peak intensity was weakened, the [NV]- peak intensity was enhanced, the [SiV] peak intensity was significantly enhanced, and [SiV]- broad peak appears when the N2 content was decreased to 1 ppm and 0.5% O2 was added in the reaction gas, the [NV]0 and [NV]- peaks disappeared. When the O2 was increased to 1%, the [SiV] peak intensity significantly decreased. As the O2 content continued to increase, the decreasing of [SiV] peak intensity slowed down. These results demonstrated that a small amount of O2 addition was helpful to the inhibition and elimination of N and Si impurities in CVD diamond.
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Key words:
- CVD single crystal diamond /
- PL spectrum /
- [NV] color center /
- [SiV] color center /
- defect
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