Effect of SiC content on cutting ability of resin diamond wire
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摘要: 制备不同SiC含量的树脂金刚石线,并进行硅片切割试验。通过记录切割过程中的扭矩和加切情况,研究不同SiC添加量对树脂金刚石线切割能力的影响。结果表明:当树脂液中SiC添加量增加时,树脂金刚石线的切割能力逐渐增强; 当SiC超过一定添加量时,切割能力有所降低。试验中,树脂液中SiC的添加量为600 g/L时,树脂金刚石线切割硅片产生的切割扭矩为96 N·m,且无加切情况,其切割能力最高;此时树脂固化后的邵氏硬度为91 HD,树脂层中的SiC分散均匀,无气孔等缺陷。Abstract: Resin diamond wires with different SiC contents were prepared and the actual silicon wafer cutting experiments were carried out. The effect of SiC contents on the cutting ability of resin diamond wire was studied by recording the torque and cutting conditions during the cutting process. The results show that when the amount of SiC in resin liquid increases, the cutting ability of resin diamond wire increases gradually. But the cutting ability will be reduced when the content of SiC is over a certain level. In experiment, when the content of SiC in resin solution is 600 g/L, the cutting torque of resin diamond wire cutting silicon wafer is 96 N·m, and without cutting, while the cutting ability is the highest. At this time, the shore hardness of resin cured is 91 HD, SiC in resin layer are uniformly dispersed, and there are no defects such as pores.
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Key words:
- resin diamond wire /
- silicon wafer /
- multi-wire cutting /
- wire saw /
- SiC
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