Abstract: Resin-bonded diamond grinding wheel was used to reduce the thickness of single crystal silicon wafer with film thickness of 80 μm and 160 μm to 400 μm. The effect of film thickness on the quality of silicon wafer was evaluated by measuring the edge collapse size of silicon wafer. The experimental results show that the silicon taping can effectively reduce the fragmentation rate of silicon wafer. When the silicon wafer is not taped, the average edge collapse size of the silicon wafer is 3.08 μm. When the taping thickness of the silicon wafer is 80 μm and 160 μm,the average edge collapse size of the silicon wafer is 4.61 μm and 3.60 μm, which means that silicon taping has a deteriorating effect on the edge collapse of silicon wafer, while the effect is small. The deterioration degree can be controlled within 20% when thick film is used. When the film-coated silicon wafer is thinned and ground with a 23 μm diamond grinding wheel, there is no significant difference in the edge collapse sizes of <110> crystal direction and <100> crystal direction of silicon wafer.