Surface residual stress measurement of silicon carbidebased on fast surface detection method
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摘要: 陶瓷加工后表面残余应力的测量通常采用一维X射线衍射线探测法,该方法存在测量过程烦琐、效率低、成本高等问题,因此采用新型快速二维面探测X射线衍射残余应力测量方法,对碳化硅陶瓷表面的残余应力进行测量,实验中测量了3种不同品牌碳化硅工件的初始表面和抛光后表面的残余应力。结果表明:此新方法单次测量即可获得样品500点的衍射信息,特别适用于陶瓷材料的应力测量。同时还发现:对于被加工表面的残余压应力,抛光加工最高能够消除近80%的残余应力,但不能改变工件的残余应力分布。Abstract: One-dimensional X-ray diffraction method is usually used to measure the residual stress on the surface of ceramics after processing. There are some problems in the measurement process, such as tedious, inefficient and high cost. Therefore, a new fast two-dimensional X-ray diffraction residual stress measurement method is used to measure the residual stress on the surface of silicon carbide ceramics. In the experiment, the residual stress on the initial surface and polished surface of three different brands of silicon carbide workpieces are measured. The results show that the new method can obtain the diffraction information of 500 points in a single measurement, which is especially suitable for the stress measurement of ceramic materials. It is also found that for the residual compressive stress of the machined surface, polishing can eliminate up to 80% of the residual stress, but can not change the residual stress distribution of the workpiece.
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