Mechanism and optimization of chemical-mechanically polishing ceramic glass substrate with CeO_2 slurry
-
摘要: 以纳米CeO2为磨料自制抛光液,研究磨料质量分数、pH值、抛光液流量、抛光盘转速、表面活性剂种类和氟化铵质量分数等因素对微晶玻璃化学机械抛光的影响,分析总结CeO2在微晶玻璃化学机械抛光中的作用机理,利用原子力显微镜(AFM)检测微晶玻璃抛光后的表面粗糙度。结果表明:当CeO2质量分数为3%、抛光液流量为25mL/min、抛光盘转速为100r/min、pH=8.0、十二烷基硫酸钠质量分数为0.01%,氟化铵质量分数为0.7%时,抛光后微晶玻璃表面粗糙度(Ra)最低为0.72nm,材料去除速率达到180.91nm/min。Abstract: The effects of mass fraction of abrasive,pH value,flow rate of polishing slurry,rotate speed,surfactant types and mass fraction of NH4 F on the material removal rate and the surface roughness of the ceramic glass substrate were investigated by CeO2 slurry.The surface roughness of the ceramic glass substrates after being polished was characterized by atomic force microscope.Resultsshow that the material removal rate(MRR)could reach 180.91nm/min and the surface roughness could reach 0.72 nm under the following conditions:the mass fraction of CeO23%,the flow rate of slurry 25mL/min,the rotate speed 100r/min,pH=8.0,the mass fraction of lauryl sodium sulfate 0.01%,the mass fraction of NH4F 0.7%.
-
Key words:
- CeO2 /
- ceramic glass /
- chemical mechanical polishing /
- material removal rate
点击查看大图
计量
- 文章访问数: 244
- HTML全文浏览量: 51
- PDF下载量: 10
- 被引次数: 0