以新型硼源制备硼掺杂金刚石膜的性能研究

基金项目:

国家自然科学基金（No.51604134）；国家科技计划对俄科技合作专项（No.2015DFR50620）；云南省教育厅科学研究项目（No.2016ZZX040）；昆明市科技计划项目（No.2014-04-A-H-02-3085）。

Properties of boron doped diamond films prepared by new type of boron source

1. State International Joint Research Center of Advanced Technology for Superhard Materials, Kunming 650093, China;
2. National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming 650093, China;
3. MoE Key Laboratory of Unconventional Metallurgy, Kunming 650093, China;
4. School of Chemistry and Environment, Yunnan Minzu University, Kunming 650031, China;
5. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China

摘要: 采用微波等离子体化学气相沉积技术，以氧化硼-乙醇溶液作为硼源，制备不同掺硼浓度的金刚石膜。利用扫描电子显微镜、X射线衍射仪、激光拉曼光谱仪、电化学工作站等研究其表面形貌、晶体结构、薄膜质量和电化学性能。结果表明：随硼元素含量升高，金刚石膜的晶体颗粒尺寸先减小后增大，电势窗口由3.1V降至2.6V，阳极电流密度由0.022 7mA·cm^-2降至0.011 9mA·cm^-2，但对背景电流及电化学可逆性几乎不影响。
- 硼掺杂 /
- 金刚石膜 /
- 电化学性能
Abstract: Diamond films with different boron concentrations are prepared by using microwave plasma chemical vapor deposition with ethanol-boron-oxide solution as boron source.SEM, XRD, Raman spectroscopy and electrochemical work station were used to observe and study the surface morphology, crystal structure and electro-chemical properties of the film.Resultsshow that with the increase of boron concentration, crystalline size of diamond film first decreases and then increases, while the potential window decreases from 3.1 V to 2.6 V and the anodic current decreases from 0.022 7mA·cm^-2 to 0.011 9 mA·cm^-2.But such increase has almost no influence on background current and electro-chemical reversibility.
- boron doping /
- diamond film /
- electrochemical properties