Effect of SiC size on dress ceramic diamond lapping disc
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摘要: 为研究碳化硅粒度对陶瓷金刚石研磨盘的修整效果的影响,使用不同粒度的碳化硅修整环对粒度为M20/30的陶瓷金刚石研磨盘进行修整,分析修整后陶瓷金刚石研磨盘的表面形貌、耐用度、加工效率等。结果发现:在修整参数为上盘转速12 r/min,下盘转速12 r/min,内环转速12 r/min,预压力0.2 MPa的条件下,用240#碳化硅修整环(碳化硅粒度尺寸61 μm)进行修整,其出刃高度与金刚石颗粒的间距相当,修整后的磨盘锋利度最好、表面保持性最好。Abstract: The effect of grit size on dressing performance of SiC ring when dressing ceramic diamond lapping disc is studied.SiC dressing rings with different grit sizes are tested to dress M20/30 ceramic diamond discs.Surface topography,durability,and process efficiency of the discs are analyzed.Resultsshow that lapping discs dressed with 240# SiC performs best sharpness and surface topography,when dressing parameters are up disc speed of 12 r/min,down disc speed of 12 r/min,inner ring speed of 12 r/min and pre-pressure of 0.2 MPa.
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Key words:
- dress rings /
- vitrified diamond lapping disc /
- grain size of SiC
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