Impact of grinding speed and pressure on material removal characteristics of monocrystalline silicon
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摘要: 为研究单晶硅磨削损伤,使用金刚石磨块在不同磨削速度和压力下对单晶硅表面进行高速划擦试验,金刚石的粒度尺寸为38~45 μm。通过测量硅片表面粗糙度、亚表面损伤深度和材料去除率,研究磨块的磨削速度和压力对材料去除特性的影响规律。结果表明:相同压力时,材料去除率随磨削速度增加呈先增大后减小的趋势,亚表面损伤深度逐渐变小;随法向压力增大,亚表面损伤深度变化不明显;在5N压力下,表面粗糙度值Ra变化明显,由6.4 μm减小到3.2 μm;而10 N压力下,Ra无明显变化。Abstract: In order to study the damage of monocrystalline silicon,it is ground using a diamond grinding block at different normal forces and velocities.The grain size of resin bond diamond grinding block is 38 to 45 μm.The surface roughness value Ra,subsurface damage depth dsd and material removal rate MMR of monocrystalline silicon are measured to study the effect of grinding velocity and pressure on material removal quality.Resultsshow that the material removal rate of monocrystalline silicon firstly increases and then decreases with the increase of the grinding velocity,whereas the depth of subsurface damage decreases monotonically.The change of the subsurface damage depth is not obvious as normal force increases.When the normal force is 5 N,Ra decreases obviously with the increasing grinding speed.However,when the normal force is 10 N,Ra tends to be stable.
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Key words:
- monocrystalline silicon /
- grinding speed /
- normal force /
- roughness value /
- material removal rate /
- subsurface damage
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