多晶金刚石片的机械磨抛工艺

李蛟; 张晓秋; 王紫光; 张昕; 张瑜

doi:10.13394/j.cnki.jgszz.2024.0017

多晶金刚石片的机械磨抛工艺

doi: 10.13394/j.cnki.jgszz.2024.0017

李蛟^{1, 2,},
张晓秋²,
王紫光^2,,
张昕^{1, 3, ,},
张瑜^4,

1.
郑州磨料磨具磨削研究所有限公司, 郑州 450001
2.
大连交通大学机械工程学院, 辽宁大连 116028
3.
高性能工具全国重点实验室, 郑州 450001
4.
郑州轻工业大学机电工程学院, 郑州 450002

基金项目: 国家自然科学基金（52175382，52375169）；辽宁省自然科学基金博士科研启动基金（2021-BS-220，2023-BS-171）。

详细信息

通讯作者:
张昕，女，1989年生，硕士。主要研究方向：功能陶瓷材料。E-mail：zx@zzsm.com

中图分类号: TN305.2；TG58
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- 文章访问数: 50
- HTML全文浏览量: 22
- PDF下载量: 2
- 被引次数: 0
出版历程
- 收稿日期: 2024-01-22
- 修回日期: 2024-08-07
- 录用日期: 2024-08-14
- 网络出版日期: 2025-03-24
- 刊出日期: 2025-02-20

Mechanical lapping and polishing process of polycrystalline diamond wafers

LI Jiao^{1, 2
,},
ZHANG Xiaoqiu²,
WANG Ziguang^2
,,
ZHANG Xin^{1, 3
, ,},
ZHANG Yu^4
,

1.
Zhengzhou Research Institute for Abrasives Co., Ltd., Zhengzhou 450001, China
2.
School of Mechanical Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning, China
3.
State Key Laboratory for High Performance Tools, Zhengzhou 450001
4.
College of Mechanical and Electrical Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China

摘要

摘要: 使用游离磨料进行机械研磨是金刚石平坦化的主流加工手段之一。针对多晶金刚石的材料特性，开展变参数的游离磨料机械研磨实验。通过改变磨料粒度、研磨压力、研磨液浓度，研究其对多晶金刚石片机械研磨的材料去除率和表面粗糙度的影响规律。结果表明：材料去除率随磨料粒度和研磨压力的增大而增大，随研磨液浓度的增大先增大后趋于稳定，其中磨料粒度是对去除率影响最显著的因素；而表面粗糙度随磨料粒度的减小而降低，随研磨压力和研磨液浓度的增大呈现先降低后升高的变化趋势，其中磨料粒度对多晶金刚石加工表面质量的影响最为显著。据此可以确定最适合加工多晶金刚石的工艺参数为研磨压力0.3 MPa、磨粒粒度W10（7.5～10 μm）、研磨液浓度4%，此条件下加工的多晶金刚石片表面粗糙度最优，R_a约为96 nm，材料去除率为7.097 μm/h。
- 金刚石 /
- 研磨液 /
- 机械研磨 /
- 研磨压力 /
- 磨粒
Abstract: Objectives Diamond is a critical material potentially or already applied in infrared windows, electronic components and acoustic devices for its excellent optical transmittance, high eletron mobility and high breakdown voltage. Mechanical lapping is one of the mainstream methods for diamond planarization. However, it is more difficult to mechanically planarize polycrystalline diamond due to the grains and the boundaries which may lead to defects and internal stress release. Variable-parameter mechanical lapping are conducted on polycrystalline diamond to investigate the effects of abrasive grain size, lapping pressure and abrasive concentration on material removal rate (R_MRR) and surface roughness R_a. Methods A group of {100} polycrystalline diamond wafers are attached to a load plate with lapping fluid speed of 8 mL/min, rotational speed of 30 r/min and orbital speed of 45 r/min. The grain size (W7～W50), the concentration of fluid (3%～6%) and the loading pressure (0.1～0.4 MPa) are tested for a reasonable process. A surface profiler is used to observe the morphology of three equal division points (800 μm×800 μm) on diamond surface along the diagonal of the 5 mm×5 mm×1 mm wafer. The average roughness are used to characterize the lapping effect. Results It is found that the R_MRR increases with the increase of grain size, reaching its maximum of 25.210 μm/h with grain size of W50 and R_a of 240 nm. But there appears micro cracks on diamond surface. The R_MRR slightly increases as the grain concentration increases from 3% to 5% but decreases at concentration of 6%, varying around 11 μm/h. The MRR also increases from ～8 μm/h to ～17 μm/h as the lapping pressure increases from 0.1 MPa to 0.4 MPa. Conversely, the surface roughness decrease from 240 nm to 100 nm with finer abrasive, which is a dominant factor affecting the surafce quality. The surface roughness also decreases first but increases then with higher lapping pressure and abrasive concentration. Conclusion The optimal process parameters for polycrystalline diamond wafer are determined, namely the lapping pressure of 0.3 MPa, the abrasive grain size of W10 and the lapping fluid concentration of 4%, where the processed polycrytalline diamond wafer achieves the best surface quality of R_a ～96 nm and a corresponding R_MRR of 7.097 μm/h.
- diamond /
- lapping fluid /
- mechanical lapping /
- lapping pressure /
- abrasive grain

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图 1 多晶金刚石初始表面

Figure 1. Polycrystalline diamond initial surface

下载: 全尺寸图片幻灯片

图 2 多晶金刚石粘接方案

Figure 2. Polycrystalline diamond positioning method

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图 3 磨粒粒度对材料去除率及表面粗糙度的影响

Figure 3. Influence of abrasive particle size on roughness and removal rate

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图 4 不同粒度磨粒研磨后的金刚石表面形貌

Figure 4. Surface morphology of diamond after grinding with different abrasive particle size

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图 5 研磨液浓度对材料去除率及表面粗糙度的影响

Figure 5. Effect of grinding fluid concentration on roughness and removal rate

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图 6 研磨压力对材料去除率及表面粗糙度的影响

Figure 6. Influence of grinding pressure on roughness and removal rate

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图 7 最优工艺研磨前后效果

Figure 7. Effect of optimal process before and after grinding

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表 1 正交因素水平表

Table 1. Orthogonal factor level table

水平	因素
水平	A 磨粒粒度	B 研磨压力 p / MPa	C 研磨液浓度 c / %
1	W10	0.2	3
2	W20	0.3	4
3	W28	0.4	5

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表 2 正交试验结果及分析

Table 2. Results and analysis of orthogonal experiments

序号	磨粒粒度 A	研磨压力 B	研磨液浓度 C	表面粗糙度 R_a / nm	材料去除率 R_MRR /（μm·h⁻¹）
1	1	1	1	123	6.004
2	1	2	2	96	7.097
3	1	3	3	109	9.031
4	2	1	2	164	8.113
5	2	2	3	197	12.351
6	2	3	1	180	15.665
7	3	1	3	215	7.336
8	3	2	1	203	16.753
9	3	3	2	214	18.492
K₁	329.000	503.000	507.000	A > C > B
K₂	541.000	496.000	474.000
K₃	632.000	503.000	521.000
K_p1	109.667	167.667	169.000
K_p2	180.333	165.333	158.000
K_p3	210.667	167.667	173.667
极差R_j	101.000	2.333	15.667
优水平	A₁	B₂	C₂
k₁	22.132	21.453	38.422		B > A > C
k₂	36.129	36.201	33.702
k₃	42.581	43.188	28.718
k_p1	7.377	7.151	12.807
k_p2	12.043	12.067	11.234
k_p3	14.194	14.396	9.573
极差r_j	6.816	7.245	3.235
优水平	A₃	B₃	C₁

下载: 导出CSV

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