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单颗金刚石磨粒划擦2D SiCf/SiC复合材料实验

王优哲 刘瑶 周扬 李家豪 黎瀚森

王优哲, 刘瑶, 周扬, 李家豪, 黎瀚森. 单颗金刚石磨粒划擦2D SiCf/SiC复合材料实验[J]. 金刚石与磨料磨具工程, 2024, 44(3): 335-345. doi: 10.13394/j.cnki.jgszz.2023.0275
引用本文: 王优哲, 刘瑶, 周扬, 李家豪, 黎瀚森. 单颗金刚石磨粒划擦2D SiCf/SiC复合材料实验[J]. 金刚石与磨料磨具工程, 2024, 44(3): 335-345. doi: 10.13394/j.cnki.jgszz.2023.0275
WANG Youzhe, LIU Yao, ZHOU Yang, LI Jiahao, LI Hansen. Experiment on single diamond abrasive scratching 2D SiCf/SiC composite materials[J]. Diamond & Abrasives Engineering, 2024, 44(3): 335-345. doi: 10.13394/j.cnki.jgszz.2023.0275
Citation: WANG Youzhe, LIU Yao, ZHOU Yang, LI Jiahao, LI Hansen. Experiment on single diamond abrasive scratching 2D SiCf/SiC composite materials[J]. Diamond & Abrasives Engineering, 2024, 44(3): 335-345. doi: 10.13394/j.cnki.jgszz.2023.0275

单颗金刚石磨粒划擦2D SiCf/SiC复合材料实验

doi: 10.13394/j.cnki.jgszz.2023.0275
基金项目: 国家自然科学基金青年基金(51905498); 先进制造技术山西省重点实验室开放基金(XJZZ202312)。
详细信息
    作者简介:

    王优哲,男,1998年生,硕士研究生。主要研究方向:复合材料磨削理论。E-mail:1806573182@qq.com

    通讯作者:

    刘瑶,男,1990年生,博士、副教授、硕士研究生导师。主要研究方向:精密加工与高端装备制造,生物医学制造与器械设计。E-mail:Liuyao@nuc.edu.cn

  • 中图分类号: TQ164; TG58; TG74

Experiment on single diamond abrasive scratching 2D SiCf/SiC composite materials

  • 摘要: 为了揭示2D SiCf/SiC复合材料的磨削去除机理,根据2D SiCf/SiC复合材料的编织结构特点,分别在2D SiCf/SiC纤维的编织表面(woven surface, WS)和叠加表面(stacking surface, SS)沿0°、45°和90°方向开展单颗金刚石磨粒划擦实验,测量其划擦力和划痕深度,并观察划痕表面形貌。结果表明:在WS0(纤维编织表面的0°方向)上SiCf/SiC材料的去除方式主要为纵向纤维(纤维轴向与进给速度方向一致)的剪切、拉伸、弯曲断裂和横向纤维(纤维轴向与进给速度方向垂直)的剪切、弯曲断裂;在WS45(纤维编织表面的45°方向)上主要为纤维的剪切、弯曲、拉伸断裂;在SS0(纤维叠加表面的0°方向)上主要为法向纤维(纤维轴向垂直于划擦表面)的延性去除、剪切、弯曲断裂,纵向纤维的剪切、拉伸、弯曲断裂;在SS90(纤维叠加表面的90°方向)上主要为法向纤维的延性去除、剪切、弯曲断裂和横向纤维的剪切、弯曲、拉伸断裂。由于SiC纤维的各向异性,不同方向、不同断裂形式有不同的力学性能,剪切断裂所需要的力最小,拉伸断裂所需要的力最大。在相同划擦深度下,因WS0、WS45、SS0、SS90方向上断裂形式的不同和剪切、弯曲、拉伸断裂所占的比例不同,其划擦力大小依次为FSS0>FWS45>FSS90>FWS0。且磨粒切入复合材料后随着裂纹的扩展和相互贯通,SiC基体会一起被剥离去除,部分基体受到挤压去除后再次被磨粒划擦去除形成延性划痕。2D SiCf/SiC复合材料切削时宜选择WS0方向,而尽量避开SS0方向。

     

  • 图  1  2D SiCf/SiC复合材料编织结构和划擦方向

    Figure  1.  2D SiCf/SiC woven structure and scratching direction

    图  2  单颗磨粒划擦实验装置及划擦示意图

    Figure  2.  Single abrasive particle scratch experimental device and scratch experimental schematic diagram

    图  3  2D SiCf/SiC复合材料表面形貌及粗糙度测量

    Figure  3.  Surface morphology and roughness measurement of 2D SiCf/SiC composite material

    图  4  2D SiCf/SiC划擦深度测量

    Figure  4.  Measurement of 2D SiCf/SiC scratch depth

    图  5  WS0方向上的划擦表面形貌

    Figure  5.  Scratch surface morphology in the WS0 direction

    图  6  WS0方向上的纤维断裂机理示意图

    Figure  6.  Schematic diagram of fiber fracture mechanism in the WS0 direction

    图  7  WS45方向上的划擦表面形貌

    Figure  7.  Scratch surface morphology in the WS45 direction

    图  8  WS45方向上横向纤维的去除机理示意图

    Figure  8.  Schematic diagram of longitudinal fiber removal mechanism in the WS45 direction

    图  9  SS90方向上的划擦表面形貌

    Figure  9.  Scratch surface morphology in SS90 direction

    图  10  SS90方向上法向纤维的去除机理示意图

    Figure  10.  Schematic diagram of normal fiber removal mechanism in the SS90 direction

    图  11  SS0方向上的划擦表面形貌

    Figure  11.  Scratch surface morphology in the SS0 direction

    图  12  测量的2D SiCf/SiC的法向划擦力

    Figure  12.  Measured 2D SiCf/SiC normal scratch force

    表  1  划擦前后金刚石表面形貌

    Table  1.   Surface morphology of diamond before and after scratching

    划擦前 划擦后
    下载: 导出CSV
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出版历程
  • 收稿日期:  2023-12-17
  • 修回日期:  2024-03-04
  • 录用日期:  2024-03-13
  • 网络出版日期:  2024-06-28
  • 刊出日期:  2024-06-28

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