Abstract: Compared with silicon based materials, silicon carbide has become an ideal substrate material for chip manufacturing due to its good thermal conductivity, breakdown electric field strength, and high bandgap width. However, the Mohs hardness of silicon carbide wafers is as high as 9.5. Realizing the grinding process of silicon carbide single crystal wafers, reducing grinding costs, and improving the processing quality of silicon carbide wafers has become an urgent problem to be solved in the semiconductor industry. This article uses Cu₃Sn and Cu₆Sn₅ intermetallic compounds as bond to prepare rough and fine grinding diamond wheels for silicon carbide wafers. The experimental research results show that this diamond grinding wheel is suitable for grinding SiC single crystal wafers, the wear ratio of the prepared 2000# diamond rough grinding wheel for grinding 6-inch silicon carbide wafers is 1: 5, the surface roughness of the silicon carbide wafer is 11nm; The wear ratio of the 12000# diamond fine grinding wheel is 1: 0.6, the surface roughness is 2.076 nm, and the TTV is less than 3 µm. The grinding performance is good and can meet the needs of industrial production.