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单晶碳化硅电化学机械抛光液的组分设计与优化

顾志斌 王浩祥 宋鑫 康仁科 高尚

顾志斌, 王浩祥, 宋鑫, 康仁科, 高尚. 单晶碳化硅电化学机械抛光液的组分设计与优化[J]. 金刚石与磨料磨具工程, 2024, 44(5): 675-684. doi: 10.13394/j.cnki.jgszz.2023.0246
引用本文: 顾志斌, 王浩祥, 宋鑫, 康仁科, 高尚. 单晶碳化硅电化学机械抛光液的组分设计与优化[J]. 金刚石与磨料磨具工程, 2024, 44(5): 675-684. doi: 10.13394/j.cnki.jgszz.2023.0246
GU Zhibin, WANG Haoxiang, SONG Xin, KANG Renke, GAO Shang. Composition design and optimization of electrochemical mechanical polishing slurry for single crystal SiC[J]. Diamond & Abrasives Engineering, 2024, 44(5): 675-684. doi: 10.13394/j.cnki.jgszz.2023.0246
Citation: GU Zhibin, WANG Haoxiang, SONG Xin, KANG Renke, GAO Shang. Composition design and optimization of electrochemical mechanical polishing slurry for single crystal SiC[J]. Diamond & Abrasives Engineering, 2024, 44(5): 675-684. doi: 10.13394/j.cnki.jgszz.2023.0246

单晶碳化硅电化学机械抛光液的组分设计与优化

doi: 10.13394/j.cnki.jgszz.2023.0246
基金项目: 国家重点研发计划(2022YFB3404304); 国家自然科学基金(51975091, 51991372); 河南省科技重大专项(221100230100)。
详细信息
    通讯作者:

    高尚,男,1982年出生,博士、副教授、博士研究生导师。主要研究方向:精密与超精密加工技术。E-mail:gaoshang@dlut.edu.cn

  • 中图分类号: TG73; TG58; TH162+.1

Composition design and optimization of electrochemical mechanical polishing slurry for single crystal SiC

  • 摘要: 单晶碳化硅具有高硬度和高化学惰性,化学机械抛光方法难以同时保证其加工效率和表面质量。电化学机械抛光具有较高的材料去除率,是加工碳化硅的一种有效方法。然而,目前针对碳化硅电化学机械抛光液的相关研究还较为缺乏。为此,首先通过单因素实验确定电化学机械抛光液中导电介质和磨粒种类,然后分析导电介质和磨粒浓度以及抛光液pH值对材料去除率和表面粗糙度的影响规律,最终确定抛光液的最佳参数。结果表明:在抛光液以NaCl为导电介质,SiO2为抛光磨粒时,碳化硅具有较好的抛光效率和表面质量,其材料去除率和表面粗糙度随着NaCl浓度的增大而增大,随着磨粒浓度的增加先增大后趋于稳定;当NaCl浓度为0.6 mol/L、SiO2质量分数为6%、抛光液pH值为7时,可以兼顾碳化硅抛光的材料去除率和表面粗糙度Sa,其值分别为 2.388 μm/h和0.514 nm。

     

  • 图  1  碳化硅工件的结构示意图

    Figure  1.  Structure of SiC workpiece

    图  2  碳化硅ECMP系统

    Figure  2.  ECMP system of SiC

    图  3  碳化硅材料去除率测量原理

    Figure  3.  Measurement principle of material removal rate of SiC

    图  4  磨粒种类对碳化硅ECMP的影响

    Figure  4.  Effects of abrasive types on ECMP of SiC

    图  5  不同磨粒抛光后的碳化硅表面形貌

    Figure  5.  Surface morphology of SiC after polishing with different abrasive grains

    图  6  导电介质种类对碳化硅ECMP的影响

    Figure  6.  Effect of different electrolytes on ECMP of SiC

    图  7  NaCl和NaNO3溶液的电导率变化趋势

    Figure  7.  Conductivity trends of NaCl and NaNO3 solutions

    图  8  SiO2浓度对碳化硅ECMP的影响

    Figure  8.  Effect of SiO2 concentration on ECMP of SiC

    图  9  磨粒质量分数为0时碳化硅抛光后的表面形貌

    Figure  9.  Surface morphology of SiC polished with 0 abrasive

    图  10  NaCl浓度对碳化硅ECMP的影响

    Figure  10.  Effect of NaCl concentration on ECMP of SiC

    图  11  抛光液pH值对碳化硅ECMP的影响

    Figure  11.  Effect of pH value on ECMP of SiC

    图  12  pH值为12时碳化硅抛光后的表面形貌

    Figure  12.  Surface morphology of SiC polished at pH 12

    图  13  最优参数下碳化硅抛光后的表面形貌

    Figure  13.  Surface morphology of SiC polished under optimal parameters

    表  1  碳化硅ECMP实验参数

    Table  1.   Experimental parameters for ECMP of SiC

    工艺参数 数值
    抛光转速 n / (r·min−1) 50
    抛光压力 p / kPa 100
    抛光时间 t / min 45
    抛光液流速 qv / (mL·min−1) 15
    下载: 导出CSV

    表  2  抛光电压对碳化硅ECMP 的影响

    Table  2.   The effect of polishing voltage on ECMP of SiC

    抛光电压 U / V 表面粗糙度 Sa / nm
    2 0.520
    4 0.641
    6 0.706
    下载: 导出CSV

    表  3  碳化硅和磨粒的硬度

    Table  3.   Hardness of SiC and abrasives

    材料种类维氏硬度Hv / GPa
    SiC24.0~28.0
    Al2O312.0~23.0
    CeO25.0~7.5
    SiO27.5
    下载: 导出CSV
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  • 收稿日期:  2023-11-17
  • 修回日期:  2023-12-25
  • 录用日期:  2024-01-18
  • 刊出日期:  2024-10-01

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