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MPCVD金刚石涂层均匀性生长的数值模拟与实验

张斌华 简小刚

张斌华, 简小刚. MPCVD金刚石涂层均匀性生长的数值模拟与实验[J]. 金刚石与磨料磨具工程, 2024, 44(2): 161-168. doi: 10.13394/j.cnki.jgszz.2023.0211
引用本文: 张斌华, 简小刚. MPCVD金刚石涂层均匀性生长的数值模拟与实验[J]. 金刚石与磨料磨具工程, 2024, 44(2): 161-168. doi: 10.13394/j.cnki.jgszz.2023.0211
ZHANG Binhua, JIAN Xiaogang. Numerical simulation and experiment of uniform growth of MPCVD diamond coating[J]. Diamond & Abrasives Engineering, 2024, 44(2): 161-168. doi: 10.13394/j.cnki.jgszz.2023.0211
Citation: ZHANG Binhua, JIAN Xiaogang. Numerical simulation and experiment of uniform growth of MPCVD diamond coating[J]. Diamond & Abrasives Engineering, 2024, 44(2): 161-168. doi: 10.13394/j.cnki.jgszz.2023.0211

MPCVD金刚石涂层均匀性生长的数值模拟与实验

doi: 10.13394/j.cnki.jgszz.2023.0211
基金项目: 国家自然科学基金(50275095,51275358)。
详细信息
    作者简介:

    张斌华,男,1998年生,硕士。主要研究方向:MPCVD金刚石涂层制备与性能检测。E-mail:zhangbh@tongji.edu.cn

    通讯作者:

    简小刚,男,1975年生,博士、副教授。主要研究方向:涂层制备与性能检测。E-mail:jianxgg@tongji.edu.cn

  • 中图分类号: TQ164; TG71

Numerical simulation and experiment of uniform growth of MPCVD diamond coating

  • 摘要: 基于多物理场耦合仿真软件COMSOL Multiphysics的微波等离子体模块建立MPCVD反应腔内氢气等离子体的仿真模型,研究基底外侧增设的环状钼支架与基底的不同高度差Δh对基底表面等离子体分布的影响。采用变异系数对等离子体分布的均匀性进行定量分析,并用SEM对金刚石涂层表面的微观形貌进行表征。结果表明:当Δh=0 mm时,等离子体分布的均匀性最佳,变异系数为3.998%,金刚石涂层的晶粒分布及大小的均匀性相较于无钼支架时的明显提升;当Δh<0 mm时,等离子体分布的均匀性随Δh增大而提升,变异系数由10.265%降至3.998%;当Δh>0 mm时,等离子体分布的均匀性不增反降,变异系数升高至10.048%。此外,当Δh=−2.0 mm时,基底表面的等离子体密度约下降20%,不利于金刚石涂层生长。

     

  • 图  1  圆柱形金属谐振腔式MPCVD装置示意图

    Figure  1.  Schematic diagram of cylindrical metal resonant cavity MPCVD device

    图  2  基片台简化模型

    Figure  2.  Simplified model of substrate platform

    图  3  电子数密度分布图

    Figure  3.  Number density distribution of electrons

    图  4  基底径向电子数密度分布图

    Figure  4.  Radial number density distribution of electrons on the substrate surface

    图  5  电子数密度的变异系数

    Figure  5.  Coefficients of variation of electron number density

    图  6  沉积时的基底表面照片

    Figure  6.  Photos of the substrate surface during deposition

    图  7  对照组和实验组的金刚石涂层不同区域的SEM图像

    Figure  7.  SEM images of different areas of diamond coating in control group and experimental group

    表  1  原始数据及电子数密度的变异系数

    Table  1.   Original data and coefficients of variation of electron number density

    高度差 Δh / mm标准差 $\sigma $/ m−3平均值 $\mu $/ m−3变异系数 ${C_{\rm{v}}}$/%
    −2.03.918 × 10173.817 × 101810.265
    −1.02.842 × 10173.801 × 10187.477
    −0.52.233 × 10173.649 × 10186.119
    01.516 × 10173.792 × 10183.998
    0.51.504 × 10173.497 × 10184.301
    1.03.131 × 10173.116 × 101810.048
    下载: 导出CSV

    表  2  实验工艺参数

    Table  2.   Process parameters

    参数形核生长
    基底温度 θ / ℃625800
    CH4流量 l1 / sccm5.04.3
    CO2流量 l2 / sccm6.00
    Ar流量 l3 / sccm150
    H2流量 l4 / sccm200200
    压力 p / kPa88
    时间 t / h27
    下载: 导出CSV

    表  3  沉积前后基底厚度

    Table  3.   Substrate thickness before and after deposition

    测量区域实验前厚度
    d1 / mm
    沉积后厚度
    d2 / mm
    厚度差
    Δd / μm
    对照组基底中心2.0012.03332
    对照组基底边缘2.0062.04438
    实验组基底中心1.9972.02124
    实验组基底边缘2.0022.02826
    下载: 导出CSV
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出版历程
  • 收稿日期:  2023-10-01
  • 修回日期:  2023-11-23
  • 网络出版日期:  2023-12-11
  • 刊出日期:  2024-04-01

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