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基于单颗金刚石划擦的单向Cf/SiC复合材料去除机理

温家宙 王庆霞 余爱武 吴重军

温家宙, 王庆霞, 余爱武, 吴重军. 基于单颗金刚石划擦的单向Cf/SiC复合材料去除机理[J]. 金刚石与磨料磨具工程, 2024, 44(3): 327-334. doi: 10.13394/j.cnki.jgszz.2023.0104
引用本文: 温家宙, 王庆霞, 余爱武, 吴重军. 基于单颗金刚石划擦的单向Cf/SiC复合材料去除机理[J]. 金刚石与磨料磨具工程, 2024, 44(3): 327-334. doi: 10.13394/j.cnki.jgszz.2023.0104
WEN Jiazhou, WANG Qingxia, YU Aiwu, WU Chongjun. Removal mechanism of unidirectional Cf/SiC composites based on single diamond grit scratching[J]. Diamond & Abrasives Engineering, 2024, 44(3): 327-334. doi: 10.13394/j.cnki.jgszz.2023.0104
Citation: WEN Jiazhou, WANG Qingxia, YU Aiwu, WU Chongjun. Removal mechanism of unidirectional Cf/SiC composites based on single diamond grit scratching[J]. Diamond & Abrasives Engineering, 2024, 44(3): 327-334. doi: 10.13394/j.cnki.jgszz.2023.0104

基于单颗金刚石划擦的单向Cf/SiC复合材料去除机理

doi: 10.13394/j.cnki.jgszz.2023.0104
基金项目: 国家自然科学基金(52005098);上海市自然科学基金(22ZR1402400);上海航天科技创新基金(SAST2022-059);中国博士后基金(2022M721910)。
详细信息
    通讯作者:

    吴重军,男,1988年生,博士、副教授。主要研究方向:高性能制造工艺与装备。E-mail:wcjunm@dhu.edu.cn

  • 中图分类号: TG580.61

Removal mechanism of unidirectional Cf/SiC composites based on single diamond grit scratching

  • 摘要: 为研究单向Cf/SiC复合材料划擦去除机理,采用单颗金刚石磨粒开展准静态划擦试验,分析不同压痕载荷下划擦材料的声发射信号变化,结合SEM形貌分析材料的去除行为和划擦去除机理。试验结果表明:声发射信号强度随着压痕载荷增加而增强,相同参数下SB方向信号值更大,信号波动更剧烈。结合声发射信号与SEM形貌分析,得出材料在不同方向的划擦去除行为,材料以脆性去除为主,SA方向纤维以拉伸断裂和纤维拔出为主,SB方向纤维主要断裂方式为弯曲断裂和剪切断裂。根据SEM形貌分析,阐述去除行为的形成过程,即解释材料划擦去除机理。

     

  • 图  1  划擦试验装置

    Figure  1.  Scratching test device

    图  2  划擦试验加工方向

    Figure  2.  Scratching directions of test

    图  3  不同划擦参数对声发射信号的影响

    Figure  3.  Effect of scratching parameters on acoustic emission signals

    图  4  SA方向的材料去除

    Figure  4.  Material removal along SA direction

    (a) 1 N; (b) / (d) 3 N; (c) / (e) 5 N

    图  5  SB方向的材料去除

    Figure  5.  Material removal along SB direction

    (a) / (d) 1 N; (b) / (e) 3 N; (c) / (f) 5 N

    图  6  SA方向材料划擦的去除机理

    Figure  6.  Material removal mechanism of scratching along SA direction

    图  7  SB方向材料划擦的去除机理

    Figure  7.  Material removal mechanism of scratching along SB direction

    图  8  划针接触纤维不同位置下材料去除

    Figure  8.  Material removal when needles contact different positions of the fibre

    表  1  T300、碳化硅的物理和力学性能参数[10,14-15]

    Table  1.   Physical and mechanical performance parameters of T300 and silicon carbide[10,14-15]

    材料密度
    ρ
    g/cm3
    维氏硬度
    HV
    断裂韧性
    τ
    MPa/m1/2
    方向 杨氏模量
    Y
    GPa
    泊松比
    ν
    抗弯强度
    σ
    MPa
    T3001.76802.0轴向2300.013388
    T3001.76802.0径向150.300612
    SiC3.22233.5轴向4500.170490
    SiC3.22233.5径向4500.170490
    下载: 导出CSV
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出版历程
  • 收稿日期:  2023-05-07
  • 修回日期:  2023-07-11
  • 录用日期:  2023-08-29
  • 网络出版日期:  2024-06-28
  • 刊出日期:  2024-06-28

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