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超纳米金刚石薄膜的快速生长及结构分析

位少博 王兵 熊鹰

位少博, 王兵, 熊鹰. 超纳米金刚石薄膜的快速生长及结构分析[J]. 金刚石与磨料磨具工程, 2023, 43(2): 176-181. doi: 10.13394/j.cnki.jgszz.2022.0122
引用本文: 位少博, 王兵, 熊鹰. 超纳米金刚石薄膜的快速生长及结构分析[J]. 金刚石与磨料磨具工程, 2023, 43(2): 176-181. doi: 10.13394/j.cnki.jgszz.2022.0122
WEI Shaobo, WANG Bing, XIONG Ying. Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films[J]. Diamond & Abrasives Engineering, 2023, 43(2): 176-181. doi: 10.13394/j.cnki.jgszz.2022.0122
Citation: WEI Shaobo, WANG Bing, XIONG Ying. Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films[J]. Diamond & Abrasives Engineering, 2023, 43(2): 176-181. doi: 10.13394/j.cnki.jgszz.2022.0122

超纳米金刚石薄膜的快速生长及结构分析

doi: 10.13394/j.cnki.jgszz.2022.0122
基金项目: 四川省省院省校合作项目(2021YFSY0029)
详细信息
    作者简介:

    位少博,男,1996年生,硕士。主要研究方向:超纳米金刚石薄膜。E-mail:529273244@qq.com

    通讯作者:

    王兵,男,1967生,博士、教授。主要研究方向:薄膜材料/功能材料。E-mail:wangbing67@163.com

  • 中图分类号: TB74;TB144;TQ164

Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films

  • 摘要: 采用微波等离子体化学气相沉积(microwave plasma chemical vapor deposition,MPCVD)技术,通过调节微波功率制备不同温度条件下的超纳米金刚石(ultrananocrystalline diamond,UNCD)薄膜。比较分析反应源激活功率及基体温度对UNCD膜生长和组成结构的影响,以期获得高质量UNCD膜材的快速生长工艺技术。采用SEM、XRD、Raman等方法分析表征UNCD薄膜的形貌结构、物相组成和生长速率,同时通过OES光谱监测UNCD薄膜沉积过程中的生长基团状态。结果表明:UNCD薄膜沉积的基体温度范围在450~650 ℃,且随着功率和基体温度增加,OES光谱中CN、C2基团峰值强度增强,生长速率从0.82 μm/h上升到6.62 μm/h;膜材中晶粒尺寸稍有增加,但平均晶粒尺寸均小于10.00 nm,且表面更加平整光滑,形成更有利于力学性能的表面形貌。因此,采用二异丙胺液态小分子为反应源,同时施加更高的微波功率,在更高的基体温度下沉积是快速生长高质量UNCD膜的有效工艺途径。

     

  • 图  1  MPCVD设备

    Figure  1.  MPCVD equipment

    图  2  不同微波功率及温度下生长的UNCD薄膜的SEM图

    Figure  2.  SEM images of UNCD films grown at different different microwave power and temperatures

    图  3  不同功率及温度下所得薄膜的XRD图

    Figure  3.  XRD patterns of the obtained films under different power and temperature

    图  4  不同功率及温度下UNCD薄膜的Raman光谱

    Figure  4.  Raman spectra of UNCD films under different power and temperature

    图  5  不同功率及温度下UNCD薄膜的ID/IG

    Figure  5.  ID/IG values of UNCD films at different power and temperature

    图  6  不同功率及温度下UNCD薄膜的ICP-OES光谱图

    Figure  6.  ICP-OES spectra of UNCD films under different power and temperature

    表  1  UNCD薄膜制备工艺参数

    Table  1.   Preparation process parameters of UNCD films

    参数名称数值
    功率 P / kW3.03.54.04.55.0
    温度 θ / ℃450500550600650
    压力 p / kPa11.311.311.311.311.3
    C6H15N流量 Q1 / (mL·min−1)88888
    H2流量 Q2 / (mL·min−1)160160160160160
    下载: 导出CSV

    表  2  不同微波功率及温度下沉积薄膜的厚度及生长速度

    Table  2.   Thickness and growth rate of deposited films under different microwave power and temperature

    参数名称数值
    功率 P / kW3.03.54.04.55.0
    温度 θ / ℃450500550600650
    3 h沉积厚度 h / μm2.4177.34913.31014.46019.870
    生长速率 v / (μm·h−10.812.454.444.826.62
    下载: 导出CSV

    表  3  不同温度下UNCD薄膜的晶粒尺寸

    Table  3.   Grain size of UNCD films at different temperatures

    功率
    p/kW
    温度
    θ / ℃
    衍射峰位
    2θ / (°)
    半峰宽
    B / (cm−1)
    由不同衍射峰
    所得晶粒尺寸
    d / nm
    平均晶粒尺寸
    d1 / nm
    3.045044.052.154.148.83
    75.980.8212.75
    92.021.249.59
    3.550043.861.207.428.73
    75.421.099.56
    91.491.299.20
    4.055043.921.058.469.20
    75.431.059.98
    91.581.299.17
    4.560043.880.959.329.34
    75.381.109.45
    91.521.289.24
    5.065044.381.018.868.98
    76.021.129.35
    92.191.378.72
    下载: 导出CSV
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出版历程
  • 收稿日期:  2022-08-08
  • 修回日期:  2022-09-24
  • 录用日期:  2022-09-29
  • 刊出日期:  2023-04-20

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