抛光垫及抛光液对固结磨料抛光氧化镓晶体的影响

吴成; 李军; 侯天逸; 于宁斌; 高秀娟

doi:10.13394/j.cnki.jgszz.2022.0043

抛光垫及抛光液对固结磨料抛光氧化镓晶体的影响

doi: 10.13394/j.cnki.jgszz.2022.0043

吴成^{1, 2},
李军^1, ,,
侯天逸¹,
于宁斌¹,
高秀娟¹

1.
南京航空航天大学机电学院, 南京210016
2.
航空工业成都飞机工业（集团）有限责任公司检验检测部，成都 610073

基金项目: 国家自然科学基金联合基金项目(U20A20293)；国家自然科学基金面上项目(52075318)；江苏省“六大人才高峰”高层次人才项目(JXQC-010)。

详细信息

作者简介:
吴成，男，1995年生，硕士研究生。主要研究方向：精密超精密加工。E-mail：wu15850568113@163. com

通讯作者:
李军，男，1979年生，教授、博士研究生导师。主要研究方向：精密超精密加工、固结磨料研磨抛光技术。E-mail： junli@nuaa.edu.cn

中图分类号: TG58；TQ164
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出版历程
- 收稿日期: 2022-04-10
- 修回日期: 2022-06-14
- 录用日期: 2022-06-17
- 刊出日期: 2023-01-12

Effect of pad and slurry on fixed abrasive polishing of gallium oxide crystal

WU Cheng^{1, 2},
LI Jun^{1
, ,},
HOU Tianyi¹,
YU Ningbin¹,
GAO Xiujuan¹

1.
College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
2.
Inspection and Testing Department, Aviation Industry Chengdu Aircraft Industry (Group) Co., Ltd., Chengdu 610073, China

摘要

摘要: 氧化镓晶体具有高禁带宽度、耐高压、短吸收截止边等优点，是最具代表性的第四代半导体材料之一，具有广阔地应用前景。氧化镓晶体抛光过程易出现微裂纹、划痕等表面缺陷，难以实现高质量表面加工，无法满足相应器件的使用要求，且现有的氧化镓晶体抛光工艺复杂、效率低。固结磨料抛光技术具有磨粒分布及切深可控、磨粒利用率高等优点。采用固结磨料抛光氧化镓晶体，探究抛光垫基体硬度、磨料浓度和抛光液添加剂对被抛光材料去除率和表面质量的影响。结果表明：当抛光垫基体硬度适中为Ⅱ、金刚石磨粒浓度为100%、抛光液添加剂为草酸时，固结磨料抛光氧化镓晶体的材料去除率为68 nm/min，表面粗糙度S_a为3.17 nm。采用固结磨料抛光技术可以实现氧化镓晶体的高效高质量抛光。
- 固结磨料抛光 /
- 氧化镓晶体 /
- 材料去除率 /
- 表面粗糙度 /
- 固结磨料抛光垫
Abstract: Gallium oxide crystal is one of the most representative fourth generation semiconductor materials with the advantages of high band gap, high voltage resistance and short absorption cutoff edge. It has broad application prospects. Micro-cracks, scratches and other surface defects are prone to appear in the polishing process of Gallium oxide crystal, which is difficult to achieve high-quality surface processing and cannot meet the requirements of corresponding devices. Moreover, the existing polishing process of gallium oxide crystal is complex and inefficient. Fixed abrasive polishing technology has the advantages of controllable abrasive distribution and depth of cut, and high utilization rate of abrasive. In this study, fixed abrasive polishing of gallium oxide crystal was adopted, and the effect of matrix hardness, abrasive concentration of polishing pad, the additives of polishing slurry on material removal rate and surface quality were investigated. The results show that when the hardness of the polishing pad is moderate II, the abrasive concentration is 100%, and the slurry additive is oxalic acid, the material removal rate is 68 nm/min and the surface roughness S_a value is 3.17 nm in fixed abrasive polishing of gallium oxide crystal. Fixed abrasive polishing technology can achieve high-efficient and high-quality polishing of gallium oxide crystal.
- fixed abrasive polishing /
- gallium oxide crystal /
- material removal rate /
- surface roughness /
- fixed abrasive pad

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图 1 ZDHP-30平面精密环抛机

Figure 1. ZDHP-30 Plane precision ring polishing machine

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图 2 固结磨料抛光垫

Figure 2. Fixed abrasive polishing pad

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图 3 氧化镓晶体

Figure 3. Gallium oxide crystal

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图 4 不同硬度基体抛光垫抛光氧化镓晶体的材料去除率

Figure 4. Material removal rates of polishing gallium oxide crystal with different matrix hardness polishing pads

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图 5 不同硬度基体抛光垫抛光后氧化镓晶体表面显微形貌

Figure 5. Surface micro morphology of polishing gallium oxide crystal with different matrix hardness polishing pads

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图 6 不同硬度基体抛光垫抛光后氧化镓晶体表面AFM形貌

Figure 6. AFM morphology after polishing gallium oxide crystal with different matrix hardness polishing pads

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图 7 不同硬度基体抛光垫抛光后氧化镓晶体的表面粗糙度

Figure 7. Surface roughness after polishing gallium oxide crystal with different matrix hardness polishing pads

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图 8 磨粒对氧化镓晶体的作用机理

Figure 8. Mechanism of action of abrasive particles on gallium oxide crystal

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图 9 不同磨粒浓度抛光垫抛光氧化镓晶体的材料去除率

Figure 9. Material removal rates of polishing gallium oxide crystal with different abrasive concentrations polishing pads

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图 10 不同磨粒浓度抛光垫抛光氧化镓晶体后的表面显微形貌

Figure 10. Surface micro morphology of polishing gallium oxide crystal with different abrasive concentrations polishing pads

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图 11 不同磨粒浓度抛光垫抛光氧化镓晶体后的AFM形貌

Figure 11. AFM morphology after polishing gallium oxide crystal with different abrasive concentration polishing pads

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图 12 不同磨粒浓度抛光垫抛光氧化镓晶体后的表面粗糙度

Figure 12. Surface roughness after polishing gallium oxide crystal with different abrasive concentrations polishing pads

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图 13 不同酸性添加剂抛光垫抛光氧化镓晶体的材料去除率

Figure 13. Material removal rates of polishing gallium oxide crystal with different acid additives

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图 14 不同酸性添加剂抛光垫抛光氧化镓晶体后的表面显微形貌

Figure 14. Surface micro morphology of polishing gallium oxide crystal with different acid additives

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图 15 不同酸性添加剂抛光垫抛光氧化镓晶体后的AFM形貌

Figure 15. AFM morphology after polishing polishing gallium oxide crystal with different acid additives

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图 16 不同酸性添加剂抛光垫抛光氧化镓晶体后的表面粗糙度

Figure 16. Surface roughness after polishing gallium oxide crystal with different acid additives

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表 1 实验参数设置

Table 1. Experimental parameter settings

金刚石磨粒粒径 Φ μm	抛光载荷 p kPa	抛光液流量 Q mL/min	抛光垫转速 n₁ r/min	工件转速 n₂ r/min	抛光时间 t min
3～5	17	60	85	80	30

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