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碳化硅晶体电化学机械抛光工艺研究

王磊 吴润泽 牛林 安志博 金洙吉

王磊, 吴润泽, 牛林, 安志博, 金洙吉. 碳化硅晶体电化学机械抛光工艺研究[J]. 金刚石与磨料磨具工程, 2022, 42(4): 504-510. doi: 10.13394/j.cnki.jgszz.2022.0029
引用本文: 王磊, 吴润泽, 牛林, 安志博, 金洙吉. 碳化硅晶体电化学机械抛光工艺研究[J]. 金刚石与磨料磨具工程, 2022, 42(4): 504-510. doi: 10.13394/j.cnki.jgszz.2022.0029
WANG Lei, WU Runze, NIU Lin, AN Zhibo, JIN Zhuji. Study on electrochemical mechanical polishing process of silicon carbide crystal[J]. Diamond &Abrasives Engineering, 2022, 42(4): 504-510. doi: 10.13394/j.cnki.jgszz.2022.0029
Citation: WANG Lei, WU Runze, NIU Lin, AN Zhibo, JIN Zhuji. Study on electrochemical mechanical polishing process of silicon carbide crystal[J]. Diamond &Abrasives Engineering, 2022, 42(4): 504-510. doi: 10.13394/j.cnki.jgszz.2022.0029

碳化硅晶体电化学机械抛光工艺研究

doi: 10.13394/j.cnki.jgszz.2022.0029
详细信息
    通讯作者:

    金洙吉,男,1967年生,教授、博士生导师。主要研究方向:精密与超精密加工技术,特种加工及其控制技术,难加工材料高效加工。E-mail:kimsg@dlut.edu.cn

  • 中图分类号: TG58; TH162+.1

Study on electrochemical mechanical polishing process of silicon carbide crystal

Funds: JIA Zhijun, MA Hongyun, WU Xuran, et al. Fundamentals of Electrochemistry (Ⅴ): Electrode Process Kinetics and Charge Transfer Process [J]. Energy Storage Science and Technology. 2013, 2(04): 402-409.
  • 摘要: 针对碳化硅晶体抛光效率低的问题,研究碳化硅晶体的电化学机械抛光工艺,对比NaOH、NaNO3、H3PO4 3种电解液电化学氧化碳化硅晶体的效果。选用0.6 mol/L的NaNO3作为电化学机械抛光过程的电解液,使用金刚石–氧化铝混合磨粒,通过正交试验研究载荷、转速、电压、磨粒粒径对电化学机械抛光碳化硅晶体的表面质量和材料去除率的影响。采用优选的试验参数进行抛光试验,结果表明:在粗抛阶段可实现20.259 μm/h的高效材料去除,在精密抛光阶段可获得碳化硅表面粗糙度Sa为0.408 nm的光滑表面。

     

  • 图  1  电化学机械抛光装置

    Figure  1.  Electrochemical mechanical polishing device

    图  2  混合磨粒抛光SiC示意图

    Figure  2.  Mechanism of polishing silicon carbide with mixed abrasive particles

    图  3  不同电解液中阳极氧化后的碳化硅表面形貌与元素成分

    Figure  3.  Surface morphology and elemental composition of silicon carbide after anodization in different electrolytes

    图  4  不同电解液氧化后SiC的XPS分析

    Figure  4.  XPS analysis of SiC modified with different electrolytes

    图  5  碳化硅在不同浓度NaNO3电解液中的极化曲线

    Figure  5.  Polarization curves of silicon carbide in different concentrations of NaNO3 electrolyte

    图  6  各因素对材料去除率与表面粗糙度的影响占比

    Figure  6.  Influence ratio of each factor on the material removal rate and surface roughness

    图  7  碳化硅晶体表面电化学机械粗抛光结果

    Figure  7.  Electrochemical mechanical rough polishing result of SiC surface

    图  8  碳化硅晶体表面电化学机械精抛光结果

    Figure  8.  Electrochemical mechanical precision finishing result of SiC surface

    表  1  正交试验参数表

    Table  1.   Orthogonal experiment parameter table

    水平 A
    电压
    U / V
    B
    载荷
    F / N
    C
    转速
    ω / (r·min−1)
    D
    磨粒组合
    1 5 10 20
    2 10 20 30
    3 15 30 40
    4 20 40 50
    下载: 导出CSV

    表  2  正交试验设计表

    Table  2.   Orthogonal experiment design table

    试验序号 A B C D
    1 5 10 20
    2 5 20 30
    3 5 30 40
    4 5 40 50
    5 10 10 30
    6 10 20 20
    7 10 30 50
    8 10 40 40
    9 15 10 40
    10 15 20 50
    11 15 30 20
    12 15 40 30
    13 20 10 50
    14 20 20 40
    15 20 30 30
    16 20 40 20
    下载: 导出CSV

    表  3  综合评分结果

    Table  3.   Comprehensive scoring results

    试验
    序号
    材料去除率
    dMRR / (μm·h−1
    粗糙度
    Sa / nm
    材料去除率
    得分Y1
    表面粗糙度
    得分Y2
    10.6660.868090
    21.4190.7731090
    39.4050.6165090
    412.6301.9116060
    58.8661.1074080
    613.0862.8497040
    75.5621.4173070
    83.3120.9022080
    919.8483.46810020
    106.3660.7403090
    111.9620.7971090
    120.9121.425080
    131.7390.46210100
    141.8601.4621070
    1516.6222.0318060
    166.1210.8473090
    下载: 导出CSV

    表  4  粗抛阶段极差分析结果

    Table  4.   Range analysis results during rough polishing

    因素 A B C D
    K1 162 178 150 94
    K2 182 154 166 112
    K3 168 198 196 190
    K4 168 150 168 284
    k1 40.5 44.5 37.5 23.5
    k2 45.5 38.5 41.5 28.0
    k3 42.0 49.5 49.0 47.5
    k4 42.0 37.5 42.0 71.0
    极差R 5.0 12.0 11.5 47.5
    主次顺序 4 2 3 1
    最优水平 2 3 3 4
    最优组合 A2B3C3D4
    下载: 导出CSV

    表  5  精抛阶段极差分析结果

    Table  5.   Range analysis results during precision polishing

    因素 A B C D
    K1 309 276 290 283
    K2 259 273 292 330
    K3 266 296 252 329
    K4 301 290 301 193
    k1 77.25 69.00 72.50 70.75
    k2 64.75 68.25 73.00 82.50
    k3 66.50 74.00 63.00 82.25
    k4 75.25 72.50 75.25 48.25
    极差R 12.50 5.75 12.25 34.25
    主次顺序 2 4 3 1
    最优水平 1 3 4 2
    最优组合 A1B3C4D2
    下载: 导出CSV
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出版历程
  • 录用日期:  2022-04-15
  • 收稿日期:  2022-03-28
  • 修回日期:  2022-04-13
  • 网络出版日期:  2022-04-15

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