Study on the Mechanism and Process Magnetorheological Variable Gap Dynamic Pressure Planarization Finishing
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摘要: 为了提高磁流变抛光的抛光效率实现光电晶片的高效高品质超光滑平坦化加工,提出一种磁流变变间隙动压平坦化加工工艺方法。本文研究了不同变间隙条件下蓝宝石晶片表面抛光材料去除率和表面粗糙度随加工时间的变化,深入分析了磁流变变间隙动压平坦化加工机理。结果表明,通过工件对磁流变抛光液施加轴向低频挤压振动,能产生抛光压力的动态变化以及磁流变液的挤压强化效应,抛光效率与抛光效果显著提升。磁流变变间隙动压平坦化加工120 min后蓝宝石晶片的表面粗糙度由Ra 7 nm下降为了Ra 0.306 nm、材料去除率5.519 nm/min,相较恒定间隙磁流变抛光,表面粗糙度降低49%、材料去除率提高55.1%;通过改变变间隙运动速度可以实现对流场特性的调控,选择合适的工件下压速度和工件拉升速度有利于提高抛光效率和表面质量。Abstract: In order to improve the polishing efficiency of magnetorheological polishing and realize the high-efficiency, high-quality and ultra smooth planarization of photoelectric wafer, a magnetorheological variable gap dynamic pressure planarization method is proposed. In this paper, the changes of material removal rate and surface roughness of sapphire wafer surface polishing with processing time under different variable gap conditions are studied, and the dynamic pressure flattening mechanism of magnetorheological variable gap is deeply analyzed. The results show that the dynamic change of polishing pressure and the extrusion strengthening effect of MR fluid can be produced by applying axial low-frequency extrusion vibration to MR polishing fluid, and the polishing efficiency and polishing effect can be significantly improved. After 120 min of magnetorheological variable gap dynamic pressure flattening, the surface roughness of sapphire wafer decreased from Ra 7 nm to Ra 0.306 nm, and the material removal rate was 5.519 nm / min. Compared with constant gap magnetorheological polishing, the surface roughness decreased by 49% and the material removal rate increased by 55.1%; By changing the moving speed of variable clearance, the flow field characteristics can be controlled. Choosing the appropriate workpiece pressing speed and workpiece lifting speed is conducive to improve the polishing efficiency and surface quality.
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