均一亚微米级氧化铈抛光粉的制备

戴蒙姣; 陈国美; 倪自丰; 章平; 钱善华; 卞达

doi:10.13394/j.cnki.jgszz.2021.0117

均一亚微米级氧化铈抛光粉的制备

doi: 10.13394/j.cnki.jgszz.2021.0117

1.
江南大学机械工程学院, 江苏无锡 214122
2.
无锡商业职业技术学院机电技术学院, 江苏无锡 214153

详细信息

通讯作者:
倪自丰，男，1981年生，博士、副教授。主要研究方向：超精密加工。E-mail: nizf@jiangnan.edu.cn

中图分类号: TG73; TB383
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出版历程
- 收稿日期: 2021-11-25
- 修回日期: 2021-12-30
- 录用日期: 2022-01-09
- 网络出版日期: 2023-02-07
- 刊出日期: 2022-08-10

Preparation of homogeneous sub-micron cerium oxide polishing powder

1.
School of Mechanical Engineering, Jiangnan University, Wuxi 214122, Jiangsu, China
2.
School of Mechanical and Electrical Engineering, Wuxi Vocational Institute of Commerce , Wuxi 214153, Jiangsu, China

摘要

摘要: 为得到均一的亚微米级二氧化铈（CeO₂）抛光粉，以六水合硝酸铈（Ce(NO₃)₃·6H₂O）为原料，以醇－水混合溶液为溶剂，采用溶剂热法合成CeO₂。改变Ce³⁺浓度和醇-水体积比，利用X射线衍射仪（XRD）、激光粒度分布仪、扫描电子显微镜（SEM）对CeO₂的物相组成和形貌特征进行表征，分析CeO₂粒子的形成过程。将合成的CeO₂用于6H-SiC晶片Si面的化学机械抛光（chemical mechanical polishing，CMP），利用原子力显微镜（atomic force microscopy, AFM）和电子天平得出CeO₂的抛光性能。结果表明：Ce³⁺浓度为0.10 mol/L，醇－水体积比为3∶1时合成的CeO₂的形貌规则、晶粒尺寸适中且粒度分布均匀。采用其抛光后，晶片表面粗糙度R_a为0.243 nm，材料去除速率d_MRR为287 nm/h。合成的CeO₂适用于化学机械抛光。
- CeO₂ /
- 均一 /
- 溶剂热法 /
- 化学机械抛光
Abstract: To obtain homogeneous submicron cerium dioxide (CeO₂) polishing powder, CeO₂ was synthesized by solvothermal reaction using cerium nitrate (Ce(NO₃)₃·6H₂O) as cerium resource and alcohol-water mixed solution as solvent. The phase composition and morphology of CeO₂ were characterized by X-ray diffraction (XRD), laser particle size analyzer and scanning electron microscope (SEM). The formation process of CeO₂ particles was analyzed by changing the concentration of Ce³⁺ and alcohol-water ratio. The synthesized CeO₂ was used for chemical mechanical polishing (CMP) Si-face of 6H-SiC. The polishing characteristics were tracked by atomic force microscopy (AFM) and electronic balance. The results indicates that when the Ce³⁺ concentration is 0.10 mol/L and alcohol/water volume ratio is 3∶1, the as-prepared particles have regular morphology, moderate particle size and uniform particle size distribution. After polished by using the as-prepared CeO₂, the R_a of wafer surface reached 0.243 nm and the d_MRR 287 nm/h. The as-prepared CeO₂ can be used for chemical mechanical polishing.
- CeO₂ /
- homogeneous /
- solvothermal method /
- chemical mechanical polishing

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图 1 煅烧前、后CeO₂-0.10的XRD图

Figure 1. XRD patterns of CeO₂-0.10 before and after calcination

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图 2 不同CeO₂的XRD图

Figure 2. XRD patterns of different CeO₂

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图 3 不同CeO₂的SEM图

Figure 3. SEM images of different CeO₂

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图 4 不同CeO₂的粒度分布图

Figure 4. Particle size distribution of different CeO₂

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图 5 CeO₂的SEM图

Figure 5. SEM image of CeO₂

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图 6 CeO₂的粒度分布图

Figure 6. Particle size distribution of CeO₂

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图 7 抛光前后晶片的表面形貌

Figure 7. Surface morphology of wafer before and after polishing

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表 1 不同CeO₂的半高宽、衍射角和晶粒尺寸

Table 1. FWHM, diffraction angle and crystallite size of different CeO₂

样品半高宽
θ_FWHM / rad 衍射角
2θ / rad 晶粒尺寸
D / nm

CeO₂-0.05 0.006 0.248 24
CeO₂-0.10 0.008 0.249 18
CeO₂-0.15 0.009 0.249 15

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