Abstract: With the increase of wafer thickness and the decrease of chip thickness, the amount of material removal increases in the process of wafer processing, and the problem of improving the processing efficiency has become one of the research hotspots. Due to the complexity of chemical mechanical polishing process, the quality of silicon wafer after polishing is affected by many factors, including the technical parameters of polishing equipment, the properties of consumables (polishing pad and polishing fluid) and the contact stress state of silicon wafer during polishing. In this paper, the research progress of chemical mechanical polishing technology for silicon wafer is introduced. The factors affecting the surface quality and material removal rate of silicon wafer, such as polishing fluid, polishing pad and polishing pressure, are discussed, and the advanced equipment used in chemical mechanical polishing of silicon wafer is reviewed.