Research on stress and subsurface damage on silicon wafer machined by rotational grinding
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摘要: 采用一种获得硅片局部位置应力状态的方法,通过测量硅片在局部位置的面形数据,结合反演计算获得该位置的平面主应力及其方向。对金刚石砂轮磨削(100)硅片的分析结果表明:不同位置的应力状态并不完全与以往的研究中通常采用的Stoney公式所计算出的平均应力相符,而是与其在整个硅片上所处的位置有关。采用角度抛光法检测亚表面损伤深度的结果表明:各种条件下损伤层深度均在0.4 μm左右,加工应力与亚表面损伤深度没有明确的对应关系。Abstract: The stress condition of local area in a wafer is acquired.By measuring the flatness of local area in the tested wafer,the planar principal stresses and their directions are solved using inverse calculation.The analysis result based on diamond ground(100)silicon wafer shows that the stress condition at different locations on the wafer does not consist well with the average stress solved by conventional methods using Stoney's equation.The stress condition depends on its location on the wafer.Moreover,taper polishing is adopted to test the depth of subsurface damage,which reveals that the depth of damage layer is about 0.4 μm with various condition and there are no distinct relationships between machining stress and subsurface damage.
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Key words:
- grinding /
- Stoney's equation /
- machining stress /
- subsurface damage
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