高性能掺硼金刚石电极的研究进展

李莲莲; 陈冠钦

doi:10.13394/j.cnki.jgszz.2021.5005

高性能掺硼金刚石电极的研究进展

doi: 10.13394/j.cnki.jgszz.2021.5005

李莲莲^1,,
陈冠钦²

1.
国家知识产权局，北京 100088
2.
同方威视技术股份有限公司，北京100084

详细信息

作者简介:
李莲莲，女，1983年生。主要研究方向：材料与相关知识产权。E-mail：msecgq@126.com

中图分类号: TQ164
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- 被引次数: 0
出版历程
- 收稿日期: 2021-06-19
- 修回日期: 2022-05-16
- 录用日期: 2022-05-17
- 刊出日期: 2022-10-10

Preparation methods of boron-doped diamond electrode and its research progresses

LI Lianlian^1
,,
CHEN Guanqin²

1.
China National Intellectual Property Administration, Beijing 100088, China
2.
NUCTECH Company Limited, Beijing 100084, China

摘要

摘要: 常规的2D-BDD平板电极反应活性面积小，降解效率低，难以实现污水的高效化处理。为了提高污水处理时的降解效率，通常期望BDD电极具有高的比表面积来提高反应活性面积，以及具有特殊的表面结构来提高氧化催化能力。然而，这样的BDD存在制备工艺复杂、设备昂贵等缺点。因此，聚焦于BDD电极的制备方法，对比不同制备方法的优缺点，探讨BDD电极在污水处理中的工业化应用前景。
- 掺硼金刚石电极 /
- 模板法 /
- 表面刻蚀 /
- 表面修饰处理
Abstract: The common two-dimensional boron doped diamond flat plate electrode in the practical wastewater treatment application shows the disadvantages of small reactive area and low degradation efficiency. In order to realize excellent degradation efficiency towards wastewater, it is expected that boron doped diamond electrode has high specific surface area so as to enhance the reactive area and has special surface structure so as to enhance its oxidative and catalytic ability. However, there still exists problems such as the complexity of preparation process and expensive equipment for such boron-doped diamond electrode. In order to address above problem, this article focuses on the preparation methods of the boron doped diamond electrode, analyze the merits and demerit of these methods, and discusses its industrial application prospect in wastewater treatment.
- boron-doped diamond electrode /
- template method /
- surface etching /
- surface modification treatment

HTML全文

图 1 掺硼金刚石污水处理原理图

Figure 1. Schematic diagram of boron doped diamond sewage treatment

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图 2 不同放大倍数的3D-BDD电极内部结构SEM图像^[19]

Figure 2. The SEM images of internal pores at different magnifications of 3D-BDD electrode ^[19]

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图 3 基于旋涂法的多孔BDD合成的策略^[23]

Figure 3. Strategy of porous BDD synthesis by spin-coating method^[23]

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图 4 BDD纳米线电极的制备工艺示意图^[24]

Figure 4. Schematic of fabrication process for B-doped diamond nanowire electrode^[24]

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图 5 BDG/BDD和BDG/NBDD/TiO₂电极的制备示意图^[26]

Figure 5. Schematic illustration of fabrication of the BDG/BDD and BDG/NBDD/TiO₂ electrode^[26]

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图 6 制备多孔BDD/Ta薄膜的示意图^[27]

Figure 6. Schematic diagram depicting the preparation of a porous BDD/Ta films^[27]

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图 7 不同刻蚀时间下Ni/BDD薄膜的SEM图像^[27]

Figure 7. SEM images of Ni/BDD films with different etching times^[27]

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图 8 BDD复合电极的SEM图^[29]

Figure 8. SEM of BDD composite electrode^[29]

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图 9 n–TiO₂/p–BDD异质结和光生载流子的转移过程的示意能带图^[30]

Figure 9. Schematic band diagram of n–TiO₂/p–BDD heterojunction and the transfer processes of photo generated carriers^[30]

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图 10 TiO₂/Au/BDD电极Z型机制载流子传输示意图^[10]

Figure 10. The carrier transport diagram of TiO₂/Au/BDD electrode Z-scheme mechanism^[10]

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表 1 常用基底材料及其热膨胀系数^[17]

Table 1. Common base material and its coefficient of thermal expansion^[17]

材料名称	热膨胀系数 λ / （10⁻⁶ K⁻¹）
材料名称	293 K	1200 K
Ti	8.60	11.30
TiC	6.40	8.60
Ta	6.30	7.40
TaC	5.60	7.10
Si	—	4.60
SiC	3.70	5.77
金刚石	3.10	3.84

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