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高性能掺硼金刚石电极的研究进展

李莲莲 陈冠钦

李莲莲, 陈冠钦. 高性能掺硼金刚石电极的研究进展[J]. 金刚石与磨料磨具工程, 2022, 42(5): 543-551. doi: 10.13394/j.cnki.jgszz.2021.5005
引用本文: 李莲莲, 陈冠钦. 高性能掺硼金刚石电极的研究进展[J]. 金刚石与磨料磨具工程, 2022, 42(5): 543-551. doi: 10.13394/j.cnki.jgszz.2021.5005
LI Lianlian, CHEN Guanqin. Preparation methods of boron-doped diamond electrode and its research progresses[J]. Diamond & Abrasives Engineering, 2022, 42(5): 543-551. doi: 10.13394/j.cnki.jgszz.2021.5005
Citation: LI Lianlian, CHEN Guanqin. Preparation methods of boron-doped diamond electrode and its research progresses[J]. Diamond & Abrasives Engineering, 2022, 42(5): 543-551. doi: 10.13394/j.cnki.jgszz.2021.5005

高性能掺硼金刚石电极的研究进展

doi: 10.13394/j.cnki.jgszz.2021.5005
详细信息
    作者简介:

    李莲莲,女,1983年生。主要研究方向:材料与相关知识产权。E-mail:msecgq@126.com

  • 中图分类号: TQ164

Preparation methods of boron-doped diamond electrode and its research progresses

  • 摘要: 常规的2D-BDD平板电极反应活性面积小,降解效率低,难以实现污水的高效化处理。为了提高污水处理时的降解效率,通常期望BDD电极具有高的比表面积来提高反应活性面积,以及具有特殊的表面结构来提高氧化催化能力。然而,这样的BDD存在制备工艺复杂、设备昂贵等缺点。因此,聚焦于BDD电极的制备方法,对比不同制备方法的优缺点,探讨BDD电极在污水处理中的工业化应用前景。

     

  • 图  1  掺硼金刚石污水处理原理图

    Figure  1.  Schematic diagram of boron doped diamond sewage treatment

    图  2  不同放大倍数的3D-BDD电极内部结构SEM图像[19]

    Figure  2.  The SEM images of internal pores at different magnifications of 3D-BDD electrode [19]

    图  3  基于旋涂法的多孔BDD合成的策略[23]

    Figure  3.  Strategy of porous BDD synthesis by spin-coating method[23]

    图  4  BDD纳米线电极的制备工艺示意图[24]

    Figure  4.  Schematic of fabrication process for B-doped diamond nanowire electrode[24]

    图  5  BDG/BDD和BDG/NBDD/TiO2电极的制备示意图[26]

    Figure  5.  Schematic illustration of fabrication of the BDG/BDD and BDG/NBDD/TiO2 electrode[26]

    图  6  制备多孔BDD/Ta薄膜的示意图[27]

    Figure  6.  Schematic diagram depicting the preparation of a porous BDD/Ta films[27]

    图  7  不同刻蚀时间下Ni/BDD薄膜的SEM图像[27]

    Figure  7.  SEM images of Ni/BDD films with different etching times[27]

    图  8  BDD复合电极的SEM图[29]

    Figure  8.  SEM of BDD composite electrode[29]

    图  9  n–TiO2/p–BDD异质结和光生载流子的转移过程的示意能带图[30]

    Figure  9.  Schematic band diagram of n–TiO2/p–BDD heterojunction and the transfer processes of photo generated carriers[30]

    图  10  TiO2/Au/BDD电极Z型机制载流子传输示意图[10]

    Figure  10.  The carrier transport diagram of TiO2/Au/BDD electrode Z-scheme mechanism[10]

    表  1  常用基底材料及其热膨胀系数[17]

    Table  1.   Common base material and its coefficient of thermal expansion[17]

    材料名称热膨胀系数 λ
    / (10−6 K−1
    293 K1200 K
    Ti 8.60 11.30
    TiC 6.40 8.60
    Ta 6.30 7.40
    TaC 5.60 7.10
    Si 4.60
    SiC 3.70 5.77
    金刚石 3.10 3.84
    下载: 导出CSV
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出版历程
  • 收稿日期:  2021-06-19
  • 修回日期:  2022-05-16
  • 录用日期:  2022-05-17
  • 刊出日期:  2022-10-10

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